2003 Aug 12 3
Philips Semiconductors Product specification
40 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width t
p
≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−40 V
V
CEO
collector-emitter voltage open base −−40 V
V
EBO
emitter-base voltage open collector −−6V
I
C
collector current (DC) notes 1 and 2 −−500 mA
I
CM
peak collector current −−1A
I
BM
peak base current −−100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; notes 1 and 2 − 250 mW
T
amb
≤ 25 °C; note 1 and 3 − 430 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2 500 K/W
in free air; notes 1, 3 and 4 290 K/W
