VSSAF3M10
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-16
1
Document Number: 87507
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Mounted on 30 mm x 30 mm pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3 A
V
RRM
100 V
I
FSM
80 A
V
F
at I
F
= 3 A (125 °C) 0.56 V
T
J
max. 175 °C
Package DO-221AC (SlimSMA)
Diode variation Single die
DO-221AC
TMBS
®
SlimSMA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSAF3M10 UNIT
Device marking code 3M10
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F(AV)
(1)
2.3
A
I
F(AV)
(2)
3
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C