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DMN63D8LDW-13

P1-P3P4-P6
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN63D8LDW
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
30V
4.2Ω @ V
GS
= 4.5V
200mA
2.8Ω @ V
GS
= 10V
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN63D8LDW-7 SOT363 3000/Tape & Reel
DMN63D8LDW-13 SOT363 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
ESD PROTECTED
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
MM4
YM
MM4
YM
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN63D8LDW
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
220
170
mA
Continuous Drain Current (Note 6) V
GS
=
10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
260
210
mA
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
300
mW
(Note 6) 400
Thermal Resistance, Junction to Ambient
(Note 5)
R
θ
JA
435
°C/W
(Note 6) 330
Thermal Resistance, Junction to Case
(Note 6)
R
θ
JC
139
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V,
I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1.0 µA
V
DS
= 30V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10.0
μA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.8
⎯
1.5 V
V
DS
= V
GS
,
I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
2.8
Ω
V
GS
= 10.0V,
I
D
= 250mA
⎯
⎯
3.8
V
GS
= 5V,
I
D
=
250mA
⎯
⎯
4.2
V
GS
= 4.5V,
I
D
= 250mA
⎯
⎯
4.5
V
GS
= 4.0V,
I
D
= 250mA
⎯
⎯
13
V
GS
= 2.5V,
I
D
= 10mA
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
= 10V,
I
D
= 0.115A
Diode Forward Voltage
V
SD
- 0.8
1.2
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
22.0
⎯
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
3.2
⎯
Reverse Transfer Capacitance
C
rss
⎯
2.0
⎯
Gate Resistance
R
G
⎯
79.9
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V Q
g
⎯
0.87
⎯
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V Q
g
⎯
0.43
⎯
Gate-Source Charge
Q
g
s
⎯
0.11
⎯
Gate-Drain Charge
Q
g
d
⎯
0.11
⎯
Turn-On Delay Time
t
D
on
⎯
3.3
⎯
nS
V
DD
= 30V, I
D
= 0.115A,
V
GEN
= 10V
,
R
GEN
= 25Ω
Turn-On Rise Time
t
r
⎯
3.2
⎯
Turn-Off Delay Time
t
D
off
⎯
12.0
⎯
Turn-Off Fall Time
t
f
⎯
6.3
⎯
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
3 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN63D8LDW
NEW PRODUCT
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V= 2.0V
GS
V= 2.5V
GS
V= 3.0V
GS
V= 4.0V
GS
V= 4.5V
GS
V = 10.0V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
01 2 3 45
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
1.5
2.5
3.5
4.5
0 5 10 15 20
1.0
2.0
3.0
4.0
5.0
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
I = 250mA
D
I = 100mA
D
I= 10mA
D
0
2
4
6
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
10
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.0V
I = 200mA
GS
D
V=V
I = 300mA
GS
D
5.0
P1-P3P4-P6

DMN63D8LDW-13

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Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V DUAL N-CH MOSFET
Lifecycle:
New from this manufacturer.
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