BAV70DV
Document number: DS35311 Rev. 4 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated
BAV70D
ADVANCE INFORMATION
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage
V
R
RMS
53 V
Forward Continuous Current (Note 4)
I
FM
300 mA
Average Rectified Output Current (Note 4)
I
O
150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
s
@ t = 1.0s
I
FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
200 mW
Thermal Resistance Junction to Ambient Air (Note 4)
R
JA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V
BR
R
75
⎯
V
I
F
= 2.5μA
Forward Voltage
V
F
⎯
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 5)
I
R
⎯
2.5
50
30
25
μA
μA
μA
nA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
2.0 pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0125175
150
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve, Total Package
A
°
,
WE
DISSI
A
I
N (mW)
D
25 10050 75 150
50
200
250
Note 4
0.01
0.1
1
10
100
1,000
0 0.2 0.4 0.6 0.8 1.0 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
I , INS
AN
ANE
S F
WA
D
EN
(mA)
F