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NBRD5H100T4G-VF01

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 7
1 Publication Order Number:
MBRD5H100/D
MBRD5H100, NBRD5H100
Switch-mode Schottky
Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• NBRD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 0.4 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
5 AMPERES, 100 VOLTS
www.onsemi.com
MARKING DIAGRAM
DPAK
CASE 369C
YWW
B
5100G
Y = Year
WW = Work Week
B5100 = Device Code
G = Pb−Free Package
1
3
4
(Pin 1: No Connect)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
MBRD5H100T4G DPAK
(Pb−Free)
2,500 /
Tape & Ree
l
NBRD5H100T4G DPAK
(Pb−Free)
2,500 /
Tape & Ree
l
NBRD5H100T4G−VF01 DPAK
(Pb−Free)
2,500 /
Tape & Ree
l
MBRD5H100, NBRD5H100
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(Rated V
R
) T
C
= 171°C
I
F(AV)
5
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 171°C
I
FRM
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
105
A
Operating Junction and Storage Temperature Range (Note 1) T
J
, T
stg
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
1.6
95.8
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
V
F
0.71
0.60
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
I
R
4.5
3.5
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MBRD5H100, NBRD5H100
www.onsemi.com
3
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
125°C
150°C
25°C
Figure 1. Typical Forward Voltage
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
125°C
150°C
25°C
Figure 2. Maximum Forward Voltage
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Ir, REVERSE CURRENT (mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
0102030405060708090100
25°C
125°C
150°C
0.0001
0.001
0.01
0.1
1
10
100
0102030405060708090100
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
VR, REVERSE VOLTAGE (V)
Ir, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
125°C
150°C
25°C
0 20406080100
0
200
400
600
800
1000
1200
T
J
= 25°C
f = 1 MHz
C, CAPACITANCE (pF)
Figure 5. Typical Capacitance
VR, REVERSE VOLTAGE (V)
160
T
C
, CASE TEMPERATURE (°C)
8
7
5
6
4
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
3
2
1
145 150 155 180
0
Figure 6. Current Derating, Case
9
10
Square
165 170 175
dc
R
q
JC
= 1.6 °C/W
P1-P3P4-P5

NBRD5H100T4G-VF01

Mfr. #:
Buy NBRD5H100T4G-VF01
Manufacturer:
ON Semiconductor
Description:
DIODE SCHOTTKY AUTO 5A 100V
Lifecycle:
New from this manufacturer.
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