MPN3700

High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements.
They are also available in surface mount.
Long Reverse Recovery Time t
rr
= 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
Low Series Resistance @ 100 MHz – R
S
= 0.7 Ohms (Typ) @
I
F
= 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
MAXIMUM RATINGS
Rating Symbol MPN3700 MMBV3700LT1 Unit
Reverse Voltage V
R
200 Vdc
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
280
2.8
200
2.0
mW
mW/°C
Junction Temperature T
J
+125 °C
Storage Temperature Range T
stg
–55 to +150 °C
DEVICE MARKING
MMBV3700LT1 = 4R
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 µAdc)
V
(BR)R
200 Vdc
Diode Capacitance
(V
R
= 20 Vdc, f = 1.0 MHz)
C
T
1.0 pF
Series Resistance (Figure 5)
(I
F
= 10 mAdc)
R
S
0.7 1.0
Reverse Leakage Current
(V
R
= 150 Vdc)
I
R
0.1 µAdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc)
t
rr
300 ns
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1 Publication Order Number:
MMBV3700LT1D
MMBV3700LT1
MPN3700
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
MMBV3700LT1 MPN3700
http://onsemi.com
2
TYPICAL CHARACTERISTICS
Figure 1. Series Resistance Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
T
A
, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
500
400
1.0
, REVERSE CURRENT ( A)
100
-60
0.01
0.001
0 +100
V
R
= 15 Vdc
+140+60+20-20
I
R
0.1
1.0
10
3.2
2.4
1.6
0.8
0
0 4.0 12 14 16
I
F
, FORWARD CURRENT (mA)
R
S
, SERIES RESISTANCE (OHMS)
2.8
2.0
1.2
0.4
T
A
= 25°C
2.0 6.0 8.0 10
300
200
100
0
0.8 0.90.7
I
F
, FORWARD CURRENT (mA)
T
A
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
2.0
10
-40
6.0
4.0
1.0
0.4
0.6
0.2
0 -50-10 -20 -30
T
A
= 25°C
C
T
, DIODE CAPACITANCE (pF)
µ
0.04
0.004
4.0
40
0.4
600
700
800
8.0
0.8
MMBV3700LT1 MPN3700
http://onsemi.com
3
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
P
D
=
T
J(max)
– T
A
R
θJA
P
D
=
150°C – 25°C
556°C/W
= 225 milliwatts
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, R
θJA
, the thermal resistance from the device
junction to ambient, and the operating temperature, T
A
.
Using the values provided on the data sheet for the SOT–23
package, P
D
can be calculated as follows:
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.

MPN3700

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
RF DIODE PIN 200V 280MW TO92
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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