FST16040

V
RRM
= 20 V - 100 V
I
F
= 160 A
Features
• High Surge Capability TO-249AB Package
• Types up to 100V V
RRM
• Isolated to Plate
Parameter Symbol FST16020 FST16030 Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20 30 V
Silicon Power
Schottk
y
Diode
FST16020 thru FST16040
FST16040
35
FST16035
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Conditions
40
pp g
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
160 160 A
Operating temperature
T
j
-40 to 125 -40 to 125 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol FST16020 FST16030 Unit
Diode forward voltage 0.75 0.75
11
10 10
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
10
A1200
V
R
= 20 V, T
j
= 25 °C
I
F
= 160 A, T
j
= 25 °C
T
C
100 °C
Conditions
25
1200 1200
-40 to 175
160 160
1200
-40 to 175
FST16040
11
FST16035
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.75 0.75
10
mA
V
-40 to 125 -40 to 125
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
www.genesicsemi.com
1
FST16020 thru FST16040
www.genesicsemi.com
2

FST16040

Mfr. #:
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 40V 160A Schottky Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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