VS-12F100M

VS-12F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
1
Document Number: 93487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes
(Stud Version), 12 A
FEATURES
High surge current capability
Stud cathode and stud anode version
Wide current range
Types up to 1200 V V
RRM
Designed and qualified for industrial and consumer level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
12 A
Package DO-203AA (DO-4)
Circuit configuration Single diode
DO-203AA (DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
12 A
T
C
144 °C
I
F(RMS)
19 A
I
FSM
50 Hz 265
A
60 Hz 280
I
2
t
50 Hz 351
A
2
s
60 Hz 320
V
RRM
Range 100 to 1200 V
T
J
-65 to +175 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
VS-12F(R)
10 100 150
12
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1200
120 1200 1400
VS-12F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
2
Document Number: 93487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
12 A
144 °C
Maximum RMS forward current I
F(RMS)
19 A
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
265
A
t = 8.3 ms 280
t = 10 ms
100 % V
RRM
reapplied
225
t = 8.3 ms 235
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
351
A
2
s
t = 8.3 ms 320
t = 10 ms
100 % V
RRM
reapplied
250
t = 8.3 ms 226
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 3510 A
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 0.77
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.97
Low level value of forward
slope resistance
r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
), T
J
= T
J
maximum 10.70
m
High level value of forward
slope resistance
r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 6.20
Maximum forward voltage drop V
FM
I
pk
= 38 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave 1.26 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range T
J
-65 to +175
°C
Maximum storage temperature range T
Stg
-65 to +200
Maximum thermal resistance, junction to case R
thJC
DC operation 2
K/W
Maximum thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, flat and greased 0.5
Allowable mounting torque
Not lubricated threads
1.5 + 0 - 10 % N · m
13 lbf · in
Lubricated threads
1.2 + 0 - 10 % N · m
10 lbf · in
Approximate weight
7g
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.33 0.26
T
J
= T
J
maximum K/W
120° 0.41 0.44
90° 0.53 0.58
60° 0.78 0.81
30° 1.28 1.29
VS-12F(R) Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Nov-15
3
Document Number: 93487
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
140
150
160
170
180
0 2 4 6 8 10 12 14
30°
60°
90°
120°
180°
Maximum Allowable
Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
12F(R) Series
R (DC) = 2.0 K/W
thJC
130
140
150
160
170
180
0 4 8 12 16 20
DC
30°
60°
90°
120°
180°
Maximum Allowable
Case Temperature (°C)
Conduction Period
Average Forward Current (A)
12F(R) Series
R (DC) = 2.0 K/W
thJC
25 50 75 100
Maximum Allowable Ambient Temperature (°C)
R
=
8
K
/
W
-
D
e
l
t
a
R
t
h
S
A
6
K
/
W
1
0
K
/
W
1
2
K
/
W
1
5
K
/
W
2
0
K
/
W
3
0
K
/
W
0
2
4
6
8
10
12
14
Average Forward Current (A)
RMS Limit
Maximum Average Forward
Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
12F(R) Series
T = 175°C
J
0 2 4 6 8 10 12 14
25 50 75 100
Maximum Allowable Ambient Temperature (°C)
R
=
6
K
/
W
-
D
e
l
t
a
R
t
h
S
A
8
K
/
W
1
0
K
/
W
1
2
K
/
W
1
5
K
/
W
2
0
K
/
W
3
0
K
/
W
0
4
8
12
16
20
0 4 8 12 16 20
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward
Power Loss (W)
Conduction Period
12F(R) Series
T = 175°C
J

VS-12F100M

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Diodes - DO4 BRAZ SQR-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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