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SI3456CDV-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 69933
S09-0530-Rev. B, 06-Apr-09
Vishay Siliconix
Si3456CDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
100
T
J
= 25 °C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.02
0.04
0.06
0.08
0.10
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
I
D
=6.1A
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which r
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
100 µs
1ms
10 ms
Limited byR
DS(on)
*
BVDSS
100 ms
1 s, 10 s
DC
Document Number: 69933
S09-0530-Rev. B, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si3456CDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
Foot (Drain) Temperature (°C)
Package Limited
I
D
- Drain Current (A)
Power Derating
0
1
2
3
4
25 50 75 100 125 150
Foot (Drain) Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 69933
S09-0530-Rev. B, 06-Apr-09
Vishay Siliconix
Si3456CDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69933
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.02
0.05
Single Pulse
P1-P3P4-P6P7-P7

SI3456CDV-T1-E3

Mfr. #:
Buy SI3456CDV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 7.7A 6TSOP
Lifecycle:
New from this manufacturer.
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