www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93748
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSK.430..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV),
I
F(AV)
180° conduction, half sine wave
430 A
82 °C
Maximum RMS on-state current I
T(RMS)
180° conduction, half sine wave at T
C
= 82 °C 675 A
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM,
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
15.7
kA
t = 8.3 ms 16.4
t = 10 ms
100 % V
RRM
reapplied
13.2
t = 8.3 ms 13.8
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
1232
kA
2
s
t = 8.3 ms 1125
t = 10 ms
100 % V
RRM
reapplied
871
t = 8.3 ms 795
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 12 320 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.96
V
High level value of threshold voltage V
F(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.06
Low level value of on-state slope resistance r
f1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.51
m
High level value of on-state slope
resistance
r
f2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.45
Maximum on-state voltage drop V
TM
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse 1.65 V
Maximum forward voltage drop V
FM
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse 1.65 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
500
mA
Typical latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt T
J
= T
J
maximum, I
TM
= 400 A, V
DRM
applied 1000 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
2.0
μs
Typical turn-off time t
q
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = - 60 A/μs
V
R
= 50, dV/dt = 20 V/μs, Gate 0 V 100
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= 130 °C, linear to V
D
= 80 % V
DRM
1000 V/μs
RMS insulation voltage V
INS
t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM/
V
RRM
applied 100 mA
