AUIRF7342QTR

P1-P3 P4-P6 P7-P9



AUIRF7342Q

4 2015-9-30

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain

Current



Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig. 7 Typical On-Resistance Vs. Gate Voltage

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-10V

-3.4 A

25 50 75 100 125 150

0

50

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

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AUIRF7342Q

5 2015-9-30

Fig. 11 Typical Source-Drain Diode

Forward Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig. 12 Maximum Safe Operating Area

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

1 10 100

0

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0 10 20 30 40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

G

GS

I =

D

-3.1A

V =-12V

DS

V =-30V

DS

V =-48V

DS

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

-V

SD

, Source-to-Drain Voltage (V)

1.0

10

100

-

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

V

GS

= 0V

T

J

= -40°C

T

J

= 25°C

T

J

= 150°C

110100

-V

DS

, Drain-toSource Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100µsec



AUIRF7342Q

6 2015-9-30

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 13. Maximum Drain Current vs.

Ambient Temperature

25 50 75 100 125 150

T

A

, Ambient Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-

I

D

,

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

P1-P3 P4-P6 P7-P9

AUIRF7342QTR

Mfr. #:

Buy AUIRF7342QTR

Manufacturer:

Infineon / IR

Description:

MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms

Lifecycle:

New from this manufacturer.

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