NTR5103NT1G Datasheet NTR5103NT1G | P1-P3

October, 2016 − Rev. 1

1 Publication Order Number:

NTR5103N/D

NTR5103N

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

• Low R

DS(on)

• Small Footprint Surface Mount Package

• Trench Technology

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (T

J

= 25°C unless otherwise stated)

Rating

Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 V

Gate−to−Source Voltage V

GS

±30 V

Drain Current (Note 1)

Steady State T

A

= 25°C

T

A

= 85°C

t < 5 s T

A

= 25°C

T

A

= 85°C

I

D

260

190

310

220

mA

Power Dissipation (Note 1)

Steady State

t < 5 s

P

D

300

420

mW

Pulsed Drain Current (t

p

= 10 ms)

I

DM

1.2 A

Operating Junction and Storage

Temperature Range

T

J

, T

STG

−55 to

+150

°C

Source Current (Body Diode) I

S

300 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State

(Note 1)

R

q

JA

417

°C/W

Junction−to−Ambient − t ≤ 5 s (Note 1)

R

q

JA

300

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

sq [1 oz] including traces)

Device Package Shipping

†

ORDERING INFORMATION

NTR5103NT1G 3000 / Tape & Reel

Simplified Schematic

SOT−23

CASE 318

STYLE 21

TJ4 MG

G

TJ4 = Device Code

M = Date Code

G = Pb−Free Package

MARKING DIAGRAM

& PIN ASSIGNMENT

3

21

Drain

Gate

2

1

3

Source

www.onsemi.com

SOT−23

(Pb−Free)

60 V

3.0 W @ 4.5 V

R

DS(on)

MAX

310 mA

I

D

MAX

(Note 1)

V

(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2.5 W @ 10 V

(Top View)

3

1

2

N−Channel

(Note: Microdot may be in either location)

NTR5103N

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter

Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

75 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 60 V

T

J

= 25°C 1 mA

T

J

= 125°C 500

Gate−to−Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±30 V 200 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

1.9 2.6 V

Negative Threshold Temperature

Coefficient

V

GS(TH)

/T

J

4.4 mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 10 V, I

D

= 240 mA 1.0 2.5 W

V

GS

= 4.5 V, I

D

= 50 mA 1.4 3.0

Forward Transconductance g

FS

V

DS

= 5 V, I

D

= 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance

C

ISS

V

GS

= 0 V, f = 1 MHz,

V

DS

= 25 V

26.7 40

pF

Output Capacitance C

OSS

4.6

Reverse Transfer Capacitance C

RSS

2.9

Total Gate Charge Q

G(TOT)

V

GS

= 5 V, V

DS

= 10 V;

I

D

= 240 mA

0.81

nC

Threshold Gate Charge Q

G(TH)

0.31

Gate−to−Source Charge Q

GS

0.48

Gate−to−Drain Charge Q

GD

0.08

SWITCHING CHARACTERISTICS, V

GS

= V (Note 3)

Turn−On Delay Time

t

d(ON)

V

GS

= 10 V, V

DD

= 30 V,

I

D

= 200 mA, R

G

= 10 W

1.7

ns

Rise Time t

r

1.2

Turn−Off Delay Time t

d(OFF)

4.8

Fall Time t

f

3.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

I

S

= 200 mA

T

J

= 25°C 0.79 1.2

V

T

J

= 85°C 0.7

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

NTR5103N

www.onsemi.com

3

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V) V

GS

, GATE−TO−SOURCE VOLTAGE (V)

6420

0

0.4

0.8

1.2

1.6

2.0

6420

0

0.4

0.8

1.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

Figure 4. On−Resistance vs. Drain Current and

Temperature

I

D

, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0

0.4

0.8

1.2

1.6

2.0

2.4

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

Figure 6. On−Resistance Variation with

Temperature

V

GS

, GATE−TO−SOURCE VOLTAGE (V) T

J

, JUNCTION TEMPERATURE (°C)

108642

0.4

0.8

1.2

1.6

1251007550250−25−50

0.6

1.0

1.4

1.8

2.2

I

D

, DRAIN CURRENT (A)

I

D

, DRAIN CURRENT (A)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

R

DS(on)

, DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

V

GS

= 10 V

5.0 V

7.0 V

8.0 V

9.0 V

4.5 V

4.0 V

6.0 V

3.5 V

3.0 V

2.5 V

2.0 V

T

J

= −55°C

T

J

= 125°C

T

J

= 25°C

T

J

= −55°C

T

J

= 125°C

T

J

= 25°C

T

J

= 85°C

V

GS

= 4.5 V

I

D

, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0

0.4

0.8

1.2

1.6

2.0

2.4

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

T

J

= −55°C

T

J

= 125°C

T

J

= 25°C

T

J

= 85°C

V

GS

= 10 V

I

D

= 250 mA

I

D

= 75 mA

150

I

D

= 0.2 A

V

GS

= 4.5 V

V

GS

= 10 V

NTR5103NT1G

NTR5103NT1G

Products related to this Datasheet