2004 Nov 22 6
NXP Semiconductors Product data sheet
NPN switching transistor PXT4401
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
300 µs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= 60 V 50 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= 6 V 50 nA
h
FE
DC current gain V
CE
= 1 V; (see Fig.6) 20
I
C
= 0.1 mA 20
I
C
= 1 mA 40
I
C
= 10 mA 80
I
C
= 150 mA; note 1 100 300
I
C
= 500 mA; V
CE
= 2 V; note 1 40
V
CEsat
collector-emitter saturation
voltage
I
C
= 150 mA; I
B
= 15 mA; note 1 400 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 750 mV
V
BEsat
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 950 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 1.2 V
C
c
collector capacitance I
E
=i
e
= 0 A; V
CB
= 5 V; f = 1 MHz 8 pF
C
e
emitter capacitance I
C
=i
c
= 0 A; V
EB
= 500 mV; f = 1 MHz 30 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 10 V; f =100 MHz 250 MHz
Switching times (between 10% and 90% levels); (see Fig.7)
t
on
turn-on time I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
= 15 mA
35 ns
t
d
delay time 15 ns
t
r
rise time 20 ns
t
off
turn-off time 250 ns
t
s
storage time 200 ns
t
f
fall time 60 ns
2004 Nov 22 7
NXP Semiconductors Product data sheet
NPN switching transistor PXT4401
Fig.6 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MGD811
10
1
11010
2
10
3
h
FE
I
C
mA
V
CE
= 1 V
Fig.7 Test circuit for switching times.
handbook, full pagewidth
R
C
R2
R1
DUT
MLB826
V
o
R
B
(probe)
450
(probe)
450
oscilloscope
oscilloscope
BB
V
i
CC
V
i
= 9.5 V; T = 500 µs; t
p
= 10 µs; t
r
= t
f
3 ns.
R1 = 68 ; R2 = 325 ; R
B
= 325 ; R
C
= 160 .
V
BB
= 3.5 V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50 .
2004 Nov 22 8
NXP Semiconductors Product data sheet
NPN switching transistor PXT4401
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62
04-08-03
06-03-16
w M
e
1
e
E
H
E
B
0 2 4 mm
scale
b
p3
b
p2
b
p1
c
D
L
p
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
H
E
L
p
4.25
3.75
e
3.0
w
0.13
e
1
1.5
1.2
0.8
b
p2
b
p1
0.53
0.40
b
p3
1.8
1.4

PXT4401,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS SW TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet