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NRVBA120ET3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
April, 2017 − Rev. 5
1 Publication Order Number:
MBRA120ET3/D
MBRA120E, NRVBA120E
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a metal−to−silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Optimized for Low Leakage Current
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, V
O
at 1/8″
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
• Marking: B1E2
Device Package Shipping
†
ORDERING INFORMATION
MBRA120ET3G SMA
(Pb−Free)
5000 / Tape &
Reel
SCHOTTKY BARRIER
RECTIFIER
1 AMPERE
20 VOLTS
SMA
CASE 403D
MARKING
DIAGRAM
www.onsemi.com
B1E2
AYWWG
B1E2 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
NRVBA120ET3G* SMA
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA120E, NRVBA120E
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 125°C)
I
O
1.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
40 A
Storage Temperature T
stg
−55 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol
5 mm x 5 mm
(Note 2)
1 Inch x 1/2 inch
(Note 3)
Unit
Thermal Resistance − Junction−to−Lead
Thermal Resistance − Junction−to−Ambient
R
θ
JL
R
θ
JA
34
138
20
77
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1), See Figure 2
V
F
T
J
= 25°C T
J
= 100°C V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.455
0.530
0.595
0.360
0.455
0.540
Maximum Instantaneous Reverse Current, See Figure 4 I
R
T
J
= 25°C T
J
= 100°C
mA
(V
R
= 20 V)
(V
R
= 10 V)
(V
R
= 5.0 V)
10
1.0
0.5
1600
500
300
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2%.
2. Mounted on a Pad Size of 5 mm x 5 mm, PC Board FR4 (2 pads).
3. Mounted on a Pad Size of 1 inch x 1/2 inch, PC Board FR4 (2 pads).
MBRA120E, NRVBA120E
www.onsemi.com
3
150°C
0.1
0.30.20.1
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1
10
0
864201210 20
I
R
, REVERSE CURRENT (A)
0.1
0.40.30.20.1 0.6
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
1
10
0 0.5
14 16 18
0.60.50.4 0.7 10.90.8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
0.90.80.7 1
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1E−08
1E−07
1E−06
1E−05
1E−04
1E−03
1E−02
V
R
, REVERSE VOLTAGE (VOLTS)
864201210 20
I
R
, REVERSE CURRENT (A)
14 16 18
1E−08
1E−07
1E−06
1E−05
1E−04
1E−03
1E−02
125°C
100°C
25°C
−40°C
150°C
100°C
25°C
150°C
125°C
100°C
75°C
25°C
150°C
100°C
25°C
P1-P3P4-P5

NRVBA120ET3G

Mfr. #:
Buy NRVBA120ET3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF MBRA120E
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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