SISH617DN-T1-GE3 Datasheet SISH617DN-T1-GE3 | P1-P3

SiSH617DN

www.vishay.com

Vishay Siliconix

S18-0699-Rev.B, 09-Jul-2018

1

Document Number: 75900

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Notebook battery charging

• Notebook adapter switch

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. Maximum under steady state conditions is 81 °C/W

d. Package limited

e. See solder profile (www.vishay.com/doc?73257

). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package

family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at

the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

g. Based on T

C

= 25 °C

PRODUCT SUMMARY

V

DS

(V) -30

R

DS(on)

max. () at V

GS

= -10 V 0.0123

R

DS(on)

max. () at V

GS

= -4.5 V 0.0222

Q

g

typ. (nC) 20.5

I

D

(A)

d, g

-35

Configuration Single

PowerPAK

®

1212-8SH

Bottom View

D

8

D

7

D

6

D

5

1

S

2

S

3

S

4

G

Top View

1

3.3 mm

0.9 mm

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package PowerPAK 1212-8

Lead (Pb)-free and halogen-free SiSH617DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

-30

V

Gate-source voltage V

GS

± 25

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

-35

d

A

T

C

= 70 °C -35

d

T

A

= 25 °C -13.9

a, b

T

A

= 70 °C -11.1

a, b

Pulsed drain current I

DM

-60

Continuous source-drain diode current

T

C

= 25 °C

I

S

-35

d

T

A

= 25 °C -3

a, b

Avalanche current

L = 0.1 mH

I

AS

-29

Single-pulse avalanche energy E

AS

42 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

52

W

T

C

= 70 °C 33

T

A

= 25 °C 3.7

a, b

T

A

= 70 °C 2.4

a, b

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

a, c

t  10 s R

thJA

26 33

°C/W

Maximum junction-to-case Steady state R

thJC

1.9 2.4

SiSH617DN

www.vishay.com

Vishay Siliconix

S18-0699-Rev.B, 09-Jul-2018

2

Document Number: 75900

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -30 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= -250 μA

--25-

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

-4.7-

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -1.2 - -2.5 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= ± 25 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= -30 V, V

GS

= 0 V - - -1

μA

V

DS

= -30 V, V

GS

= 0 V, T

J

= 55 °C - - -5

On-state drain current

a

I

D(on)

V

DS

 -10 V, V

GS

= -10 V -30 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= -10 V, I

D

= -13.9 A - 0.0103 0.0123



V

GS

= -4.5 V, I

D

= -10.3 A - 0.0185 0.0222

Forward transconductance

a

g

fs

V

DS

= -15 V, I

D

= -13.9 A - 35 - S

Dynamic

b

Input capacitance C

iss

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

- 1800 -

pFOutput capacitance C

oss

-370-

Reverse transfer capacitance C

rss

-312-

Total gate charge Q

g

V

DS

= -15 V, V

GS

= -10 V, I

D

= -13.9 A - 39 59

nC

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -13.9 A

- 20.5 31

Gate-source charge Q

gs

-6-

Gate-drain charge Q

gd

-11-

Gate resistance R

g

f = 1 MHz 0.4 2 4 

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 1.35 

I

D

 -11.1 A, V

GEN

= -10 V, R

g

= 1 

-1122

ns

Rise time t

r

-918

Turn-off delay time t

d(off)

-3250

Fall time t

f

-918

Turn-on delay time t

d(on)

V

DD

= -15 V, R

L

= 1.35 

I

D

 -11.1 A, V

GEN

= -4.5 V, R

g

= 1 

-4060

Rise time t

r

-4365

Turn-off delay time t

d(off)

-3045

Fall time t

f

-1122

Drain-Source Body Diode Characteristics

Continuous source-drain diode

current

I

S

T

C

= 25 °C

---35

A

Pulse diode forward current I

SM

---60

Body diode voltage V

SD

I

S

= -11.1 A, V

GS

= 0 V

- -0.8 -1.2 V

Body diode reverse recovery time t

rr

I

F

= -11.1 A, di/dt = 100 A/μs,

T

J

= 25 °C

- 3350ns

Body diode reverse recovery charge Q

rr

-3045nC

Reverse recovery fall time t

a

-18-

ns

Reverse recovery rise time t

b

-16-

SiSH617DN

www.vishay.com

Vishay Siliconix

S18-0699-Rev.B, 09-Jul-2018

3

Document Number: 75900

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

15

30

45

60

01234

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

V

GS

=10Vthru5V

V

GS

=3V

V

GS

=4V

V

GS

=4.5V

V

GS

=10V

0.000

0.006

0.012

0.018

0.024

0.030

015304560

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

0

2

4

6

8

10

010203040

I

D

= 13.9 A

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

V

DS

=24V

V

DS

=8V

V

DS

=15V

0.0

0.2

0.4

0.6

0.8

1.0

01234

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

T

C

= 25 °C

T

C

= 125 °C

T

C

=- 55 °C

C

rss

0

600

1200

1800

2400

3000

0 5 10 15 20 25 30

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

oss

0.6

0.9

1.2

1.5

1.8

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

(Normalized)R

DS(on)

- On-Resistance

V

GS

=4.5V

I

D

=13.9A

V

GS

=10V

SISH617DN-T1-GE3

SISH617DN-T1-GE3

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