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VNQ660SPTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
List of figures VNQ660SP
4/26
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7. Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 10. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 11. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 13. ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 14. On state resistance vs V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 15. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 16. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 17. On state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 19. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 20. Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 21. Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 22. Openload Off state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 23. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 24. Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 25. PowerSO-10 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 26. Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 19
Figure 27. Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 28. Thermal fitting model of a quad channel HSD in PowerSO-10. . . . . . . . . . . . . . . . . . . . . . 20
Figure 29. PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 30. PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 31. PowerSO-10 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 32. SO-28 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
VNQ660SP Block diagram and pin description
5/26
1 Block diagram and pin description
Figure 1. Block diagram
Figure 2. Configuration diagram (top view)
Table 2. Suggested connections for unused and not connected pins
Connection / pin Status N.C. Output Input
Floating X X X X
To ground X
Through 10KΩ
resistor
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 1
OVERTEMP. 2
I
LIM2
DEMAG 2
I
LIM1
DEMAG 1
INPUT 1
INPUT 2
GND
V
CC
OUTPUT 1
OUTPUT 2
DRIVER 2
DRIVER 1
LOGIC
OVERTEMP. 3
OVERTEMP. 4
I
LIM4
DEMAG 4
I
LIM3
DEMAG 3
INPUT 3
INPUT 4
OUTPUT 3
OUTPUT 4
DRIVER 4
DRIVER 3
STATUS
STATUS
OPEN LOAD
OFF-STATE
1
2
3
4
5
6
7
8
9
10
11
GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1
V
CC
Electrical specifications VNQ660SP
6/26
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
2.2 Thermal data
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
Supply voltage 41 V
- V
CC
Reverse DC supply voltage - 0.3 V
I
OUT
DC output current, per each channel Internally limited A
I
R
Reverse DC output current, per each channel - 15 A
I
IN
Input current +/- 10 mA
I
STAT
Status current +/- 10 mA
I
GND
DC ground current at T
C
< 25°C -200 mA
V
ESD
Electrostatic discharge (human body model: R=1.5KΩ;
C = 100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum switching energy
(L = 0.38mH; R
L
= 0Ω; V
bat
= 13.5V; T
jstart
= 150ºC; I
L
= 14A)
101 mJ
P
tot
Power dissipation at T
C
= 25°C 114 W
T
j
Junction operating temperature - 40 to 150 °C
T
stg
Storage temperature - 65 to 150 °C
E
C
Non repetitive clamping energy at T
C
= 25°C 150 mJ
Table 4. Thermal data (per island)
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.1
(1)
52
(2)
°C/W
R
thj-amb
Thermal resistance junction-ambient (one chip ON) 51.1
(1)
1. When mounted on a standard single-sided FR-4 board with 1cm
2
of Cu (at least 35 µm thick).
33
(2)
2. When mounted on a standard single-sided FR-4 board with 6cm
2
of Cu (at least 35 µm thick).
°C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26

VNQ660SPTR-E

Mfr. #:
Buy VNQ660SPTR-E
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution Quad Channel Hi-Side
Lifecycle:
New from this manufacturer.
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