2SA1298
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1298
Low Frequency Power Amplifier Application
Power Switching Applications
• High DC current gain: h
FE
= 100 to 320
• Low saturation voltage: V
CE (sat)
= −0.4 V (max)
(I
C
= −500 mA, I
B
= −20 mA)
• Suitable for driver stage of small motor
• Complementary to 2SC3265
• Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−30 V
Collector-emitter voltage V
CEO
−25 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−800 mA
Base current I
B
−160 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-10
