2SA1952
Transistors
High-speed Switching Transistor (
−
60V,
−
5A)
2SA1952
zFeatures
1) High speed switching. (tf : Typ. 0.15 µs at I
C
= −3A)
2) Low V
CE(sat)
. (Typ. −0.2V at I
C
/I
B = −3/−0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
z
Absolute maximum ratings
(Ta = 25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−100
−60
−5
−5
150
−55~+150
Unit
V
V
V
A
−10
1
10
A(Pulse)
W
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
z
Packaging specifications and h
FE
Type 2SA1952
CPT3
Q
2500
TL
Package
h
FE
Code
Basic ordering unit (pieces)
z
zz
zExternal dimensions (Units : mm)
2SA1952
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
5.1
zElectrical characteristics (Ta = 25°C)
Min.
Typ.
Max. Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
−5
−
−
−
120
−
−
−
−
−
−
−
−
80
130
−
−
−10
−10
−0.3
270
−
−
V
V
µA
µA
V
−
MHz
pF
I
C
= −50µA
BV
CEO
−60 −
−
VI
C
= −1mA
I
E
= −50µA
V
CB
= −100V
V
EB
= −5V
I
C
/I
B
=−3A/−0.15A
−−
−0.5
VI
C
/I
B
=−4A/−0.2A
V
BE(sat)
−−
−1.5
VI
C
/I
B
=−4A/−0.2A
−−
−1.2
VI
C
/I
B
=−3A/−0.15A
h
FE
V
CE
= −2V , I
C
= −1A
V
CE
= −10V , I
E
= 0.5A , f = 30MHz
V
CB
= −10V , I
E
= 0A , f = 1MHz
ton −−0.3 µsI
C
= −3A , R
L
= 10Ω
tstg −−1.5 µsI
B1
= −I
B2
= −0.15A
tf −−0.3 µsV
CC
−30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector-base breakdown voltage
Parameter
BV
CBO
Symbol
−100
