©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC3123
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 20 V
V
EBO
Emitter-Base Voltage 3 V
I
C
Collector Current 50 mA
I
B
Base Current 25 mA
P
C
Collector Power Dissipation 150 mW
T
J
Junction Temperature 1500 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 20 V
I
CBO
Collector Cut-off Current V
CB
=25V, I
E
=0 0.1 µA
I
EBO
Emitter Cut-off Current V
EB
=3V, I
C
=0 1 µA
h
FE
DC Current Gain V
CE
=10V, I
C
=5mA 60 240
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=5mA 900 1400 MHz
C
RE
Reverse Transfer Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.4 0.5 pF
G
CE
Conversion Gain V
CC
=12V, f=200MHz
f
L
=260MHz
20 23 dB
NF Output Capacitance V
CE
=12V, f=200MHz,
f
L
=260MHz
3.8 5.5 dB
Classification R O Y
h
FE
60 ~ 120 90 ~ 180 120 ~ 240
1. Base 2. Emitter 3. Collector
KSC3123
Mixer for UHF TV Tuner
•G
CE
=23dB
•C
RE
=0.4pF
HAO
Marking
h
FE
grade
1
2
3
SOT-23
