RSQ035P03
Transistor
Rev.A 3/4
zElectrical characteristic curves
Fig.1 Typical Transfer Characteristics
0 0.5 1.0
0.001
0.1
1
0.01
10
1.5
Gate−Source Voltage : −V
GS
[V]
Drain Current : −I
D
(A)
2.0 2.5 3.0 3.5 4.0
Ta=125°C
75°C
25°C
−25°C
Fig.2 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
−4.5V
−10V
V
GS
=−4V
R
DS
(on)[mΩ]
vs.Drain Current
Fig.3 Static Drain−Source On−State
Resistance
0.1 1
10
100
1000
10
Drain Current : −I
D
[A]
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
vs.Drain Current
Ta=125°C
75°C
25°C
−25°C
Fig.4 Static Drain−Source On−State
0.1 1
10
100
1000
10
Draqin Current : −I
D
[A]
Static Drain−Source On−State Resistance
Ta=125°C
75°C
25°C
−25°C
R
DS
(on)[mΩ]
vs.Drain−Current
Fig.5 Static Drain−Source On−State
0.1 1
10
100
1000
10
Draqin Current : −I
D
[A]
Static Drain−Source On−State Resistance
Ta=125°C
75°C
25°C
−25°C
R
DS
(on)[mΩ]
vs.Drain−Current
0 0.5
1.0
1.5
Source−Drain Voltage : −V
SD
[V]
Fig.6 Reverse Drain Current
0.01
Reverse Drain Current : −I
DR
[A]
0.1
10
1
2.0
Ta=125°C
75°C
25°C
−25°C
Source-Drain Current
0.01 0.1 1 10 100
Drain−Source Voltage : −V
DS
[V]
Fig.7 Typical Capactitance
10
100
10000
1000
vs.Drain−Source Voltage
Capacitance : C [pF]
C
iss
C
oss
C
rss
0.01 0.1 1 10
Drain Current : −I
D
[A]
Fig.8 Switching Characteristics
1
10
1000
100
t
d(off)
t
d(on)
t
r
t
f
Switching Time : t [ns]
Fig.9 Dynamic Input Characteristics
01
0
4
8
6
Total Gate Charge : Qg[nC]
Gate-Source Voltage: -V
GS
[V]
2345
1
2
3
5
6
7
789101112
