TSM2328
100V N-Channel MOSFET
1/5
Version: B14
Key Parameter Performance
Parameter Value Unit
V
DS
100 V
R
DS(on)
(max)
250 mΩ
Q
g
11.1 nC
Features
● Low R
DS(ON)
250mΩ (Max.)
● Low gate charge typical @ 11.1nC (Typ.)
● High performance trench technology
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package
Packing
TSM2328CX RFG SOT-23 3Kpcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
±20
V
Continuous Drain Current I
D
1.5
A
Pulsed Drain Current
(Note 1)
I
DM
6
A
Continuous Source Current (Diode Conduction) I
S
0.6
A
Total Power Dissipation @ T
A
= 25
o
C P
D
1.38 W
Operating Junction Temperature T
J
150 ºC
Storage Temperature Range T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Foot RӨ
JF
55
o
C/W
Thermal Resistance - Junction to Ambient RӨ
JA
100
o
C/W
1. Gate
2. Source
3. Drain
