PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 200 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-200 V
Collector-Emitter Voltage V
CEO
-200 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-200 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-200 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
µA
V
CB
=-160V
Emitter Cut-Off Current I
EBO
-0.1
µA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3 V I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1 V I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1 V IC=-100mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
50
50 300
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
Transition
Frequency
f
T
100 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX576
3-204
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(
s
at)
- (V
olts)
Typical Switching Speeds
IC - Collector Current (Amps)
Switching ti
m
e
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain (%)
V
BE
(
s
at)
- (V
olts)
V
BE
- (V
olts)
I
C
- Co
l
le
c
to
r
Cur
r
e
n
t (
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
1 100010 100
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
V
CE
=-10V
-0.0001
-0.001
-1
-0.01 -0.1
20
40
60
80
100
-0.2
-0.0001
-0.001
-1
-0.01 -0.1
I
C
/I
B
=10
-0.4
-0.6
-0.8
-1.0
0
-0.0001
-0.001
-1
-0.01 -0.1
I
C
/I
B
=10
-0.2
-0.4
-0.6
-0.8
3
2
1
4
5
-0.1
-1
0
I
B1
=I
B2
=I
C
/10
-0.01
ts
tf
td
tr
ts
µS
tr
nS
300
200
100
400
500
0
tf
nS
600
400
200
800
1000
0
td
nS
100
50
0
-0.6
-0.0001
-0.001
-1
-0.01 -0.1
-0.8
-1.0
-1.2
-1.4
V
CE
=-10V
ZTX576
3-205
