IXYS reserves the right to change limits, test conditions, and dimensions.
IXFL 80N50Q2
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 40 A Note 1 50 65 S
C
iss
10500 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1610 pF
C
rss
300 pF
t
d(on)
29 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 40 A 25 ns
t
d(off)
R
G
= 1 Ω (External) 60 ns
t
f
11 ns
Q
g(on)
260 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 40 A 65 nC
Q
gd
125 nC
R
thJC
0.2 K/W
R
thCK
0.05 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 80 A
I
SM
Repetitive; 320 A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
250 ns
Q
RM
1.2 µ C
I
RM
8A
I
F
= 25A
-di/dt = 100 A/µs
V
R
= 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS 264 OUTLINE
