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SP8K1TB

P1-P3P4-P4
SP8K1
Transistors
1/3
Switching (30V, 5.0A)
SP8K1
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
Each lead has same dimensions
SOP8
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta=25°C)
It is the same ratings for the Tr. 1 and Tr. 2.
∗1
∗1
∗2
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1 Pw 10µs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
30
20
±5.0
±20
1.6
6.4
2
150
−55 to +150
Limits
zEquivalent circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
∗2
∗1
(8) (7)
(1) (2)
(6) (5)
(3) (4)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter Symbol Limits Unit
Channel to ambient
∗
∗MOUNTED ON A CERAMIC BOARD.
SP8K1
Transistors
2/3
zElectrical characteristics (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
Drain-source breakdown voltage
I
DSS
Zero gate voltage drain current
V
GS (th)
Gate threshold voltage
Static drain-source on-state
resistance
R
DS (on)
Forward transfer admittance
Input capacitance
Output capacitance
C
iss
Reverse transfer capacitance
C
oss
Turn-on delay time
C
rss
Rise time
t
d (on)
Turn-off delay time
t
r
Fall time
t
d (off)
Total gate charge
t
f
Gate-source charge
Q
g
Gate-drain charge
Q
gs
Q
gd
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
− 10 µAV
GS
=20V, V
DS
=0V
V
DD
15V
30 −−VI
D
=1mA, V
GS
=0V
−−1 µAV
DS
=30V, V
GS
=0V
1.0 − 2.5 V V
DS
=10V, I
D
=1mA
− 36 51 I
D
=5.0A, V
GS
=10V
− 52 73 mΩ I
D
=5.0A, V
GS
=4.5V
− 58 82 I
D
=5.0A, V
GS
=4V
3.0 −−SI
D
=5.0A, V
DS
=10V
− 230 − pF V
DS
=10V
− 80
50
− pF V
GS
=0V
−
6
− pF f=1MHz
V
GS
=10V
R
L
=6Ω
R
GS
=10Ω
−
8
− ns
−
22
− ns
−
5
− ns
−
3.9
− ns
−
1.1
5.5 nC
−
1.4
− nC V
GS
=5V
−−nC I
D
=5.0A
I
D
=2.5A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Forward voltage
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
SP8K1
Transistors
3/3
zElectrical characteristic curves
100
1000
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
012345678
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
9
10
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=5A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
=10V
Pulsed
0246810121416
GATE-SOURCE VOLTAGE : V
GS
(V)
0
50
100
150
200
250
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=5A
I
D
=2.5A
0.01
0.1
1
10
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.1 1 10
V
GS
=4V
Pulsed
1
10
100
1000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
P1-P3P4-P4

SP8K1TB

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MOSFET TRANS MOSFET NCH 30V 5A 8PIN
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