OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-HFA04SD60STRPBF

P1-P3P4-P6P7-P8
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 94034
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
50
40
20
100
1000
dI
F
/dt (A/μs)
t
rr
(ns)
30
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
14
10
0
100 1000
dI
F
/dt (A/μs)
I
RR
(A)
4
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
2
6
8
12
200
160
20
100
1000
dI
F
/dt (A/μs)
Q
rr
(nC)
60
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
40
80
120
180
100
140
1000
100
100
1000
dI
F
/dt (A/μs)
dI
(rec)M
/dt (A/μs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 8 A
I
F
= 4 A
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
5
Document Number: 94034
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
6
Document Number: 94034
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
2
- HEXFRED
®
family
3
- Electron irradiated
4
- Current rating (04 = 4 A)
5
- D-PAK
6
- Voltage rating (60 = 600 V)
7
- S = D-PAK
8 -
TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
Device code
51 32 4 6 7 8 9
HFVS- A 04 SD 60 S TR PbF
1 - Vishay Semiconductors product
9
-
PbF = lead (Pb)-free
P = lead (Pb)-free (for TRR and TRL)
P1-P3P4-P6P7-P8

VS-HFA04SD60STRPBF

Mfr. #:
Buy VS-HFA04SD60STRPBF
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching RECOMMENDED ALT 78-VSHFA04SD60STRM3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet