Data Sheet ADuCM330/ADuCM331
Rev. C | Page 7 of 16
T
A
= −40°C to +115°C
T
A
= +115°C to
+125°C
1
Parameter Test Conditions/Comments Min Typ Max Typ Unit
PROCESSOR START-UP TIME
1
At Power-On Includes kernel power-on execution
time, VDD drops to < 0.8 V
18 ms
Brownout VDD drops below power on reset
voltage but not below 0.8 V
1.15 ms
After Reset Event Includes kernel power-on execution
time
1.25 ms
Wake-Up from LIN
ms
LIN INPUT/OUTPUT GENERAL
1
Baud Rate 1000 20,000 Bits/sec
VDD Supply voltage range for which the
LIN interface is functional
7 18 V
LIN Comparator Response
Time
38 90 µs
LIN DC PARAMETERS
I
LIN_DOM_MAX
Current limit for driver when LIN bus is
in dominant state, VBAT = VBAT
(maximum)
40 200 mA
I
LIN_PAS_REC
1
Driver off, 7.0 V < VBUS < 18 V, VDD =
VLIN − 0.7 V
20 µA
I
LIN_PAS_DOM
1
Input leakage, VLIN = 0 V, VBAT = 12 V,
driver off
−1 mA
I
LIN_NO_GND
1, 22
Control unit disconnected from
ground, GND = VDD, 0 V < VLIN <
18 V, VBAT = 12 V
−1 +1 mA
I
BUS_NO_BAT
1
VBAT disconnected, VDD = GND, 0 V <
VBUS < 18 V
30
µA
V
LIN_DOM
1
LIN receiver dominant state, VDD > 7.0 V 0.4 × VDD V
V
LIN_REC
1
LIN receiver recessive state, VDD > 7.0 V 0.6 VDD V
V
LIN_CNT
1
V
LIN_CNT
= (V
TH_DOM
+ V
TH_REC
)/2, VDD > 7.0 V 0.475 ×
VDD
0.5 ×
VDD
0.525 ×
VDD
V
V
HYS
1
V
HYS
= V
TH_REC
− V
TH_DOM
0.175 ×
VDD
V
V
LIN_DOM_DRV_LOSUP
1
LIN dominant output voltage, VDD =
7.0 V
R
L
= 500 Ω 1.2 V
R
L
= 1000 Ω 0.6 V
V
LIN_DOM_DRV_HISUP
1
LIN dominant output voltage, VDD =
18 V
R
L
= 500 Ω 2 V
R
L
= 1000 Ω 0.8 V
V
LIN_RECESSIVE
1
LIN recessive output voltage 0.8 × VDD V
VBAT Shift
1, 22
0 0.115 ×
VDD
V
GND Shift
1, 22
0 0.115 ×
VDD
V
R
SLAVE
Slave termination resistance 20 30 47 30
V
SERIAL_DIODE
1
Voltage drop at the serial diode,
DSer_Int
0.4 0.7 1 V
ADuCM330/ADuCM331 Data Sheet
Rev. C | Page 8 of 16
T
A
= −40°C to +115°C
T
A
= +115°C to
+125°C
1
Parameter Test Conditions/Comments Min Typ Max Typ Unit
LIN AC PARAMETERS
1
Bus load conditions (CBUS||RBUS):
1 nF||1 kΩ, 6.8 nF||660 Ω, 10 nF||500 Ω
D1 Duty Cycle 1 0.396
THREC(MAX) = 0.744 × VBAT
THDOM(MAX) = 0.581 × VBAT
VSUP = 7.0 V to 18 V, t
BIT
= 50 µs
D1 = t
BUS_REC(MIN)
/(2 × t
BIT
)
D2 Duty Cycle 2 0.581
THREC(MIN) = 0.284 × VBAT
THDOM(MIN) = 0.422 × VBAT
VSUP = 7.0 V to 18 V, t
BIT
= 50 µs
D2 = t
BUS_REC(MAX)
/(2 × t
BIT
)
D3
22
THREC(MAX) = 0.778 × VBAT
0.417
THDOM(MAX) = 0.616 × VBAT
VDD = 7.0 V to 18 V
t
BIT
= 96 µs
D3 = t
BUS_REC(MIN)
/(2 × t
BIT
)
D4
22
THREC(MIN) = 0.389 × VBAT 0.590
THDOM(MIN) = 0.251 × VBAT
VDD = 7.0 V to 18 V
t
BIT
= 96 µs
D4 = t
BUS_REC(MAX)
/(2 × t
BIT
)
t
RX_PDR
22
Propagation delay of receiver 6 µs
t
RX_SYM
22
Symmetry of receiver propagation
delay rising edge, with respect to
falling edge (t
RX_SYM
= t
RF_PDR
− t
RX_PDF
)
−2 +2 µs
PACKAGE THERMAL
SPECIFICATIONS
Thermal Impedance
JA
)
23
JEDEC 4-layer board 40 °C/W
POWER REQUIREMENTS
Power Supply Voltages
VDD (Pin 26) 3.6 18 V
DVDD33 (Pin 21) 3.3 3.3 V
AVDD18 (Pin 19) 1.88 1.88 V
DVDD18 (Pin 22) 1.88 1.88 V
POWER CONSUMPTION
IDD (Processor Normal
Mode)
24
CD0 (PCLK = 16 MHz), 16 MHz 1% mode,
ADCs off, reference buffer off, executing
code from program flash
8 17 9 mA
CD1 (PCLK = 8 MHz), 16 MHz 1% mode,
ADCs off, reference buffer off, executing
code from program flash
7
mA
CD0 (PCLK = 16 MHz), 16 MHz 1% mode,
ADCs on, reference buffer on, executing
code from program flash
9.5 18.5 10 mA
IDD (Processor Powered
Down)
Precision oscillator off, ADC off,
external LIN master pull-up resistor
present, measured with wake-up and
watchdog timers clocked from low
power oscillator, maximum value is at
105°C, and VDD = 18 V
60 100 µA
IDD LIN 500 µA
IDD IADC
Gain = 4, 8, or 16
µA
Gain = 32 or 64 800 µA
LPM, gain = 64 350 µA
Data Sheet ADuCM330/ADuCM331
Rev. C | Page 9 of 16
T
A
= −40°C to +115°C
T
A
= +115°C to
+125°C
1
Parameter Test Conditions/Comments Min Typ Max Typ Unit
IDD ADC1 VADC 550 µA
IDD Internal Reference (1.2 V) 150 µA
IDD HFOSC Reduction from 1% to 3% mode 50 µA
1
Not guaranteed by production test, but by design and/or characterization data at production release.
2
Valid for PGA current ADC gain settings of 4, 8, 16, 32, and 64.
3
System chopping enabled.
4
These specifications include temperature drift.
5
A user system calibration removes this error at a given temperature (and at a given gain for the current channel).
6
The offset error drift is included in the offset error. This typical specification is an indicator of the offset error due to temperature drift. This typical value is the mean of
the temperature drift characterization data distribution.
7
Includes internal reference temperature drift.
8
The gain drift is included in the total gain error. This typical specification is an indicator of the gain error due to the temperature drift in the ADC. This typical value is
the mean of the temperature drift characterization data distribution.
9
Voltage channel specifications include resistive attenuator input stage, unless otherwise stated.
10
RMS noise is referred to voltage attenuator input; for example, at f
ADC
= 1 kHz, the typical rms noise at the ADC input is 7.5 µV, scaling by the attenuator (24) yields
these input referred noise figures.
11
Valid after an initial self calibration.
12
It is possible to extend the ADC input range by up to 10% by modifying the factory set value of the gain calibration register or using system calibration. This approach
can also be used to reduce the ADC input range (LSB size).
13
Valid for a differential input less than 10 mV.
14
The absolute value of the voltage of VTEMP and GND_SW must be 100 mV (minimum) for accurate operation of the temperature analog-to-digital converter (T-ADC).
15
Measured using box method.
16
The long-term stability specification is accelerated and noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
17
Valid after an initial self gain calibration.
18
Die temperature.
19
Endurance is qualified to 10,000 cycles, as per JEDEC Standard 22 Method A117 and measured at −40°C, +25 °C, and +115°C. Typical endurance at +25°C is 100k cycles.
20
Data retention lifetime equivalent at junction temperature (T
J
) = 85°C, as per JEDEC Standard 22 Method A117. Data retention lifetime derates with junction temperature.
21
Measured with LIN communication active.
22
These specifications are not production tested but are supported by LIN compliance testing.
23
Thermal impedance can be used to calculate the thermal gradient from ambient to die temperature.
24
Typical additional supply current consumed during Flash/EE memory program and erase cycles is 3 mA and 1 mA, respectively.

ADUCM331WDCPZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Battery Management Battery Monitor GenIII(128KB)
Lifecycle:
New from this manufacturer.
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