OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-3EJU06HM3/6A

P1-P3P4-P6P7-P7
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-17
1
Document Number: 96068
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 3 A FRED Pt
®
FEATURES
• Ultrafast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop and ultrafast
recovery time, and fast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, output
operation, inverters or as freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
PRIMARY CHARACTERISTICS
I
F(AV)
3 A
V
R
600 V
V
F
at I
F
0.99 V
t
rr
50 ns
T
J
max. 175 °C
Package SlimSMA (DO-221AC)
Circuit configuration Single
Cathode Anode
SlimSMA (DO-221AC)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 117 °C
(1)
3
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 43
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 100 - -
V
Forward voltage V
F
I
F
= 3 A - 1.15 1.35
I
F
= 3 A, T
J
= 125 °C - 0.99 1.2
Reverse leakage current I
R
V
R
= V
R
rated - - 3
μA
T
J
= 150 °C, V
R
= V
R
rated - - 100
Junction capacitance C
T
V
R
= 600 V - 6.2 - pF
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-17
2
Document Number: 96068
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 45 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 50
T
J
= 25 °C
I
F
= 3 A
dI
F
/dt = 500 A/μs
V
R
= 400 V
-52-
T
J
= 125 °C - 82 -
Peak recovery current I
RRM
T
J
= 25 °C - 7.3 -
A
T
J
= 125 °C - 10 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 210 -
nC
T
J
= 125 °C - 400 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance,
junction to lead
R
thJL
Device mounted on PCB with 8 mm x 16 mm
soldering lands
-16-
°C/W
Thermal resistance,
junction to ambient
R
thJA
Device mounted on PCB with 3 mm x 3 mm
soldering lands
- 115 -
Approximate Weight
0.032 g
0.0011 oz.
Marking device Case style SlimSMA (DO-221AC) 3U6
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-17
3
Document Number: 96068
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
1
10
100
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
80
100
120
140
160
180
012345
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
0
1
2
3
4
5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
20
40
60
80
100
120
140
160
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
100
150
200
250
300
350
400
450
500
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6P7-P7

VS-3EJU06HM3/6A

Mfr. #:
Buy VS-3EJU06HM3/6A
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 3A FRED Pt AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet