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NUF2114MNT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 0
1 Publication Order Number:
NUF2114/D
NUF2114
2 Line Audio EMI Filter with
ESD Protection
This device is a 2 line audio EMI filter array designed for speaker
applications. It offers greater than −30 dB attenuation at frequencies
from 900 MHz to 3.0 GHz. This device also offers ESD
protection−clamping transients from static discharges and ESD
protection is provided across all capacitors.
Features
• Provides EMI Filtering and ESD Protection
• Integration of 10 Discretes
• Compliance with IEC61000−4−2 (Level 4)
30 kV (Contact)
• DFN8, 2x2 mm Package
• Moisture Sensitivity Level 1
• ESD Ratings: Machine Model = C
Human Body Model = 3B
• Matching Series Impedances for Speaker Applications
• This is a Pb−Free Device
Applications
• Wireless Phones
• MP3s
• PDAs
• Digital Cameras
• Portable DVDs
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DFN8
CASE 506AA
Device Package Shipping
†
ORDERING INFORMATION
NUF2114MNT1G DFN8
(Pb−Free)
3000 / Tape & Reel
MARKING
DIAGRAM
http://onsemi.com
1
(Top View)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
CC
8
4
CC
5
R
R
(Note: Microdot may be in either location)
U4 = Specific Device Code
M
= Date Code
G = Pb−Free Package
4
3
2
1
(Bottom View)
GND
5
6
7
8
IN2
NC
NC
IN1
OUT2
NC
NC
OUT1
PIN CONNECTIONS
U4MG
G
1
NUF2114
http://onsemi.com
2
MAXIMUM RATINGS
Parameter Symbol Value Unit
ESD Discharge IEC61000−4−2 Contact Discharge V
PP
30 kV
Steady−State Power per Resistor @ 25°C P
R
180 mW
Steady−State Power per Package @ 25°C P
T
360 mW
Operating Temperature Range T
OP
−40 to 85 °C
Storage Temperature Range T
stg
−55 to 150 °C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s) T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Test Conditions Symbol Min Typ Max Unit
Maximum Reverse Working Voltage V
RWM
− − 12 V
Breakdown Voltage I
R
= 1.0 mA V
BR
13.7 15.7 17.7 V
Leakage Current V
RWM
= 12 V I
R
− − 0.1
A
Resistance I
F
= 40 mA R 8.1 9.0 9.9
Capacitance per Diode (Notes 1, 3) C
d
51 60 66 pF
Cut−Off Frequency (Note 2) Above this frequency,
appreciable attenuation occurs
f
3dB
50 MHz
1. Measured at 25°C, V
R
= 0 V, f = 1.0 MHz.
2. 50 source and 50 load termination.
3. Total line capacitance is 2 times the diode capacitance (C
d
).
NUF2114
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C unless otherwise specified)
Figure 1. Insertion Loss Characteristics
FREQUENCY (Hz)
(S21) dB
0
−10
−20
−30
−40
−45
1.0E+6 10E+6 100E+6 10E+91.0E+9
Figure 2. Analog Cross−Talk
−5
−15
−25
−35
FREQUENCY (Hz)
(S41) dB
0
−20
−40
−60
−80
1.0E+6 10E+6 100E+6 10E+91.0E+9
−10
−30
−50
−70
Figure 3. Typical Resistance over Temperature
TEMPERATURE (°C)
RESISTANCE (OHMS)
8.7
8.4
8.3
8.2
8.1
−40 −15 10 6035
Figure 4. Typical Line Capacitance vs. Reverse
Bias Voltage
8.6
8.5
REVERSE VOLTAGE (VOLTS)
CAPACITANCE (pF)
110
90
60
40
−12 −8 −4128
100
80
70
50
85 04
130
120
P1-P3P4-P4

NUF2114MNT1G

Mfr. #:
Buy NUF2114MNT1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors PWR MICRO 2 LINE AUDO FTR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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