Vishay Siliconix
Si7636DP
Document Number: 72768
S09-0272-Rev. G, 16-Feb-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• Ultra-Low On-Resistance Using High Density
TrenchFET
®
Gen II Power MOSFET Technology
•Q
g
Optimized
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• 100 % R
g
Tested
APPLICATIONS
• Low-Side DC/DC Conversion
- Notebook
- Server
- Workstation
• Synchronous Rectifier, POL
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
30
0.004 at V
GS
= 10 V
28
36
0.0048 at V
GS
= 4.5 V
25
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerP AK SO-8
Bottom V
ie
w
Ordering Information:
Si7636DP-T1-E3 (Lead (Pb)-free)
Si7636DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFE
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
28 17
A
T
A
= 70 °C 22 13
Pulsed Drain Current (10 µs Pulse Width) I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
4.3 1.7
Avalanche Current L = 0.1 mH I
AS
50
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
5.2 1.9
W
T
A
= 70 °C 3.3 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
19 24
°C/W
Steady State 52 65
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.3 1.8