1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2 ! steradians.
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Forward Current (pw, 10µs; 100Hz) I
F
3A
Forward Current (pw, 1µs; 200Hz) I
F
10 A
Reverse Voltage V
R
3V
Power Dissipation (T
A
= 25°C)
(1)
P
D
170 mW
Power Dissipation (T
C
= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DESCRIPTION
• The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength I
F
= 100 mA "
P
— 880 — nm
Emission Angle at 1/2 Power I
F
= 100 mA # — ±8 — Deg.
Forward Voltage I
F
= 100 mA V
F
— — 1.7 V
Reverse Leakage Current V
R
= 3 V I
R
— — 10 µA
Total Power F5D1
(7)
I
F
= 100 mA P
O
12.0 — — mW
Total Power F5D2
(7)
I
F
= 100 mA P
O
9.0 — — mW
Total Power F5D3
(7)
I
F
= 100 mA P
O
10.5 — — mW
Rise Time 0-90% of output t
r
— 1.5 — µs
Fall Time 100-10% of output t
f
— 1.5 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300286 4/24/01 1 OF 3 www.fairchildsemi.com
