BSS131E6327

P1-P3 P4-P6 P7-P9

Type

BSS131

SIPMOS

®

Small-Signal-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

• Qualified according to AEC Q101

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

0.11 A

T

A

=70 °C

0.09

Pulsed drain current

I

D,pulse

T

A

=25 °C

0.4

Reverse diode dv /dt dv /dt

I

D

=0.1 A, V

DS

=192 V,

di /dt =200 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

ESD sensitivity (HBM) as per

MIL-STD 883

Class 1a

Power dissipation

P

tot

T

A

=25 °C

0.36 W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Value

V

DS

240 V

R

DS(on),max

14

Ω

I

D

0.1 A

Product Summary

PG-SOT-23

Type Package Pb-free Tape and Reel Information Marking

BSS131 PG-SOT23 Yes L6327 SRs

Rev. 2.4 page 1 2011-06-07

BSS131

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance,

junction - minimal footprint

R

thJA

- - 350 K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

240 - - V

Gate threshold voltage

V

GS(th)

V

DS

=0 V, I

D

=56 µA

0.8 1.4 1.8

Drain-source leakage current

I

D (off)

V

DS

=240 V, V

GS

=0 V,

T

j

=25 °C

- - 0.01 µA

V

DS

=240 V, V

GS

=0 V,

T

j

=150 °C

--5

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 10 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5 V, I

D

=0.09 A

- 9.07 20

Ω

V

GS

=10 V, I

D

=0.1 A

- 7.7 14

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=0.08 A

0.06 0.13 - S

Values

Rev. 2.4 page 2 2011-06-07

BSS131

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

-5877pF

Output capacitance

C

oss

- 7.3 10

Reverse transfer capacitance

C

rss

- 2.8 4.2

Turn-on delay time

t

d(on)

- 3.3 5.0 ns

Rise time

t

r

- 3.1 4.6

Turn-off delay time

t

d(off)

- 13.7 20

Fall time

t

f

- 64.5 97

Gate Charge Characteristics

Gate to source charge

Q

gs

- 0.16 0.22 nC

Gate to drain charge

Q

gd

- 0.8 1.2

Gate charge total

Q

g

- 2.1 3.1

Gate plateau voltage

V

plateau

- 2.90 - V

Reverse Diode

Diode continous forward current

I

S

- - 0.11 A

Diode pulse current

I

S,pulse

- - 0.43

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=0.1 A,

T

j

=25 °C

- 0.81 1.2 V

Reverse recovery time

t

rr

- 42.9 64.3 ns

Reverse recovery charge

Q

rr

- 22.6 34 nC

V

R

=120 V, I

F

=0.1 A,

di

F

/dt =100 A/µs

T

A

=25 °C

Values

V

GS

=0 V, V

DS

=25 V,

f =1 MHz

V

DD

=120 V,

V

GS

=10 V, I

D

=0.1 A,

R

G

=6 Ω

V

DD

=192 V, I

D

=0.1 A,

V

GS

=0 to 10 V

Rev. 2.4 page 3 2011-06-07

P1-P3 P4-P6 P7-P9

BSS131E6327

Mfr. #:

Buy BSS131E6327

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 240V .11A SOT-23

Lifecycle:

New from this manufacturer.

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