NXP Semiconductors
PMV48XPA
20 V, P-channel Trench MOSFET
PMV48XPA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 10 March 2014 8 / 15
V
GS
(V)
0.0 - 3.0- 2.0- 1.0
017aaa132
- 14
I
D
(A)
0
- 2
- 4
- 6
- 8
- 10
- 12
(1) (2)
(1)(2)
V
DS
> I
D
× R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
- 60 1801200 60
017aaa133
1.0
0.5
1.5
2.0
a
0.0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
- 60 1801200 60
017aaa134
- 0.8
- 0.4
- 1.2
- 1.6
V
GS(th)
(V)
0.0
(1)
(2)
(3)
I
D
= -0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
V
DS
(V)
-10
- 1
-10
2
-10- 1
017aaa135
10
3
10
2
10
4
C
(pF)
10
(2)
(1)
(3)
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
