PAM8408DR Datasheet PAM8408DR | P1-P3

PAM8408

Document number: DS36992 Rev. 1 - 2

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PAM8408

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2x3W STEREO DIFFERENTIAL INPUT CLASS D

AUDIO AMPLIFIER WITH MEMORY UP/DOWN VOLUME

Description

The PAM8408 is a filter-less Class-D amplifier with high SNR and

differential input that helps eliminate noise. Advanced 32-step

Up/Down volume control minimizes external components and allows

speaker volume control. The gain will held when the chip is in

shutdown mode.

The PAM8408 supports 2.5V to 6V operation make it idea for up to

4 cells alkaline battery applications.

Features like greater than 87% efficiency and small PCB area make

the PAM8408 Class-D amplifier ideal for portable applications. The

output uses a filter-less architecture minimizing the number of

external components and PCB area whilst providing a high

performance, simple and lower cost system.

The PAM8408 built in auto recovery SCP (short circuit protection) and

thermal shutdown.

The PAM8408 is available in SO-16L package.

Features

• 3W Output at 10% THD with a 4Ω Load and 5V Supply

• 2.4W Output at 1% THD with a 4Ω Load and 5V Supply

• 2.5V to 6.0V VDD Operating

• Fully Differential Input

• Filter-less, Low Quiescent Current and Low EMI

• Low THD+N

• 32-Step Memory Up/Down Volume Control from -80dB to 24dB

• Superior Low Noise: 60uV

• Minimize Pop/Clip Noise

• Auto Recovery Short Circuit Protection

• Thermal Shutdown

• Pb-Free SO-16L Package

Pin Assignments

SO-16L

LOUTP

LOUTN

UP

VDD

ROUTP

VDD

ROUTN

GND

15

9

10

11

12

13

14

16

GND

RINN

GND

DOWN

LINN

SD

1

2

3

4

5

6

7

8

PAM8408

XXXYWWLL

RINP

LINP

Applications

• PC Speaker

• Wireless Speaker

• Home Sound Systems

• Active Speakers

• Docking Stations

Typical Applications Circuit

6 GND

GND 13

5 DOW N

7 LINN

VDD 16

8 LINP

GND 12

1 RINP

ROUTN 14

2 RINN

ROUTP 15

LOUTP 10

VDD 9

4 UP

3 SD

LOUTN 11

PAM8408

01. uF

C6

V

DD

4Ω

1uF

C2

RINN

01.

uF

C8

LINP

SHDN

ON

01. uF

C5

RINP

01. uF

C7

LINN

4Ω

V

DD

1uF

C2

PAM8408

Document number: DS36992 Rev. 1 - 2

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www.diodes.com

June 2014

PAM8408

NEW PRODUCT

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Pin Descriptions

Pin Number Pin Name Function

1 RINP Positive Input of Right Channel Power Amplifier

2 RINN Negative Input of Right Channel Power Amplifier

3 SD Full Chip Shutdown Control Input (active low)

4 UP Volume UP Control (active low)Ground Connection

5 DOWN Volume down Control (active low)

6,12,13 GND Ground

7 LINN Negative Input of Left Channel Power Amplifier

8 LINP Positive Input of Left Channel Power Amplifier

9,16 VDD Power Supply

10 LOUTP Positive Output of Left Channel Power Amplifier

11 LOUTN Negative Output of Left Channel Power Amplifier

14 ROUTN Negative Output of Right Channel Power Amplifier

15 ROUTP Positive Output of Right Channel Power Amplifier

Functional Block Diagram

Interface Control

Attenuation Decoder

VDD

RINP

LIN N

VDD

GND

LOU TP

LOU TN

ROUTN

ROUTP

GND

MODULATOR

DRIVER

INTERNAL

OSCILLATOR

OSC

BIAS

AND

REFERENCES

MODULATOR

DRIVER

Thermal

Protection

Current

Protection

DOWN

SD

VDD

+

-

RINN

UP

+

-

LIN P

VDD

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Parameter Rating Unit

Supply Voltage (VDD) 6.5 V

Pins Input Voltage (SD, UP, Down, IN)

-0.3 to V

DD

+0.3

V

Storage Temperature -65 to 150 °C

Maximum Junction Temperature 150 °C

Junction to ambient thermal resistance 40 °C/W

PAM8408

Document number: DS36992 Rev. 1 - 2

3 of 11

www.diodes.com

June 2014

PAM8408

NEW PRODUCT

A PRODUCT LINE OF

DIODES INCORPORATED

Recommended Operating Conditions (@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Min Max Unit

V

DD

Supply Voltage 2.5 6.0 V

T

A

Operating Ambient Temperature Range

-40 85 °C

T

J

Junction Temperature Range

-40 125 °C

Electrical Characteristics (@T

A

= +25°C, V

DD

= 5V, Gain = 24dB, R

L

= 8Ω (33μH)+R+L(33μH), unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Units

Supply Voltage Range

V

DD

2.5 6.0 V

Quiescent Current

I

Q

No Load 8 mA

Output Offset Voltage

V

OS

No Load 10 mV

Drain-Source On-State

Resistance

R

DS(ON)

I

DS

= 0.5A

P MOSFET 0.3

Ω

N MOSFET 0.2

Output Power

P

O

THD+N = 1%,

f = 1kHz

R

L

= 8Ω

1.4

W

R

L

= 4Ω

2.4

Total Harmonic Distortion Plus

Noise

THD+N

R

L

= 8Ω，P

O

=0.85W,f=1KHz

0.08

%

R

L

= 4Ω，P

O

=1.75W,f=1KHz

0.08

Power Supply Ripple Rejection PSRR Input AC-GND, f=1KHz, Vpp=200mV 70 dB

Channel Separation CS

P

O

=1W, f=1KHz

-95 dB

Oscillator Frequency

f

OSC

200 250 300 kHz

Efficiency η

P

O

= 1.1W, f = 1kHz, R

L

= 8Ω

87 %

P

O

= 2.4W, f = 1kHz, R

L

= 4Ω

83 %

Noise Vn

Input

AC-GND

A-weighting 60

uV

No A-weighting 80

Signal Noise Ratio SNR F = 20 - 20kHz, THD = 1% 95 dB

Turn-on Time Ton VDD = 5V 0.65 S

Mute Current

I

MUTE

MUTE = VDD 4 10 mA

Shutdown Current

I

SD

V

SD

= 0V

5 µA

Logic Input High

V

IH

Include SD,UP,DOWN 1.4 V

Logic Input Low

V

IL

Include SD,UP,DOWN 0.6 V

Over Temperature Protection OTP 150 °C

Over Temperature Hysteresis OTH 40 °C

PAM8408DR

PAM8408DR

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