www.irf.com 1
04/30/09
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
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Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.051mH, R
G
= 25Ω, I
AS
= 21A.
Notes:
IRF6724MPbF
IRF6724MTRPbF
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
l RoHs Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Description
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max
1.9mΩ@ 10V 2.7mΩ@ 4.5V
0 20406080100
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
VDS= 15V
I
D
= 21A
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0
2
4
6
8
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 27A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
33nC 10nC 3.9nC 34nC 20nC 1.8V
SQ SX ST MQ
MX
MT MP
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
21
12
Max.
21
150
212
±20
30
27
DirectFET ISOMETRIC
MX
PD -97131A
