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FDMS8670AS

P1-P3P4-P6P7-P8
tm
May 2009
©2009 Fairchild Semiconductor Corporation
FDMS8670AS Rev.C2
www.fairchildsemi.com
1
FDMS8670AS N-Channel PowerTrench
®
SyncFET
TM
FDMS8670AS
N-Channel PowerTrench
®
SyncFET
TM
30V, 42A, 3.0m:
Features
Max r
DS(on)
= 3.0m: at V
GS
= 10V, I
D
= 23A
Max r
DS(on)
= 4.7m: at V
GS
= 4.5V, I
D
= 18A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 42
A
-Continuous (Silicon limited) T
C
= 25°C 127
-Continuous T
A
= 25°C (Note 1a) 23
-Pulsed 200
E
AS
Single Pulse Avalanche Energy 384 mJ
P
D
Power Dissipation T
C
= 25°C 78
W
Power Dissipation T
A
= 25°C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 1.6
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8670AS FDMS8670AS Power 56 13’’ 12mm 3000units
4
3
2
1
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
FDMS8670AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDMS8670AS Rev.C
2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1mA, V
GS
= 0V 30 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10mA, referenced to 25°C 28 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24V, V
GS
= 0V 500 PA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 1mA 1.0 1.7 3.0 V
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10mA, referenced to 25°C -5 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 23A 2.4 3.0
m:V
GS
= 4.5V, I
D
= 18A 3.5 4.7
V
GS
= 10V, I
D
= 23A, T
J
= 125°C 3.5 4.7
g
FS
Forward Transconductance V
DD
= 10V, I
D
= 23A 143 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
2718 3615 pF
C
oss
Output Capacitance 1537 2045 pF
C
rss
Reverse Transfer Capacitance 343 515 pF
R
g
Gate Resistance f = 1MHz 0.9 :
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 23A,
V
GS
= 10V, R
GEN
= 6:
14 26 ns
t
r
Rise Time 510ns
t
d(off)
Turn-Off Delay Time 32 52 ns
t
f
Fall Time 410ns
Q
g
Total Gate Charge V
GS
= 0V to 10V
V
DD
= 15V,
I
D
= 23A
39 55 nC
Q
g
Total Gate Charge V
GS
= 0V to 4.5V 20 28 nC
Q
gs
Gate to Source Charge 7.2 nC
Q
gd
Gate to Drain “Miller” Charge 4.0 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
=2A (Note 3) 0.4 0.7 V
t
rr
Reverse Recovery Time
I
F
= 23A, di/dt = 300A/Ps
39 63 ns
Q
rr
Reverse Recovery Charge 48 77 nC
NOTES:
1. R
TJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
2. Starting T
J
= 25°C, L = 3mH, I
AS
= 16A, V
DD
= 30V, V
GS
=10V.
3. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
FDMS8670AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDMS8670AS Rev.C
2
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
01234
0
40
80
120
160
200
V
GS
= 4V
V
GS
= 10V
V
GS
= 4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
V
GS
= 3.5V
V
GS
= 3V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 40 80 120 160 200
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 4V
V
GS
=3.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 4.5V
V
GS
= 3V
V
GS
=10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 23A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
2
4
6
8
10
12
14
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 23A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(m:)
V
GS
, GATE TO SOURCE VOLTAGE (V)
O n -R e si s t an c e v s G at e t o
Source Voltage
Figure 5. Transfer Characteristics
1234
0
35
70
105
140
175
V
DS
= 5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r c e t o D ra i n D i od e
Forward Voltage vs Source Current
P1-P3P4-P6P7-P8

FDMS8670AS

Mfr. #:
Buy FDMS8670AS
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
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