©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
PN3567
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current - Continuous 600 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 30mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 80 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
A
= 75°C
50
5
nA
µA
I
EBO
Emitter Cut-off Current V
EB
= 4V, I
C
= 0 25 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 1V, I
C
= 150mA
V
CE
= 1V, I
C
= 30mA
40
40
120
V
CE
(sat) Collector-Emitter Saturation Voltage * I
C
= 150mA, I
B
= 15mA 0.25 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 1V, I
C
= 150mA 1.1 V
Small Signal Characteristics
C
obo
Output Capacitance V
CB
= 10V, I
E
= 0 20 pF
C
ibo
Input Capacitance V
EB
= 0.5V, I
C
= 0 80
PN3567
NPN General Purpose Amplifier
• This device is for use as a medium amplifier and switch requiring
collector currents up 300mA.
• Sourced from process 19.
1. Emitter 2. Base 3. Collector
TO-92
1
