PRLL4001,115

DATA SHEET
Product specification
Supersedes data of 1996 Jun 10
2003 May 13
DISCRETE SEMICONDUCTORS
PRLL4001; PRLL4002
Rectifiers
b
ook, halfpage
M3D121
2003 May 13 2
Philips Semiconductors Product specification
Rectifiers PRLL4001; PRLL4002
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Shipped in 8 mm embossed tape
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
(1) Implotec is a trademark of Philips.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD87) and symbol.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
PRLL4001 50 V
PRLL4002 100 V
V
R
continuous reverse voltage
PRLL4001 50 V
PRLL4002 100 V
I
F(AV)
average forward current averaged over any 20 ms period;
T
tp
= 105 °C
1.60 A
averaged over any 20 ms period;
T
amb
=65°C; see Fig.2
0.68 A
I
FRM
repetitive peak forward current 10 A
I
FSM
non-repetitive peak forward current half sinewave; 60 Hz 20 A
T
stg
storage temperature 65 +175 °C
T
j
junction temperature 65 +175 °C
2003 May 13 3
Philips Semiconductors Product specification
Rectifiers PRLL4001; PRLL4002
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm, see Fig.4.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 1 A; see Fig.3 1.1 V
V
F(AV)
full-cycle average forward voltage I
F(AV)
= 1 A 0.8 V
I
R
reverse current V
R
=V
Rmax
10 µA
V
R
=V
Rmax
; T
amb
= 100 °C50µA
I
R(AV)
full-cycle average reverse current V
R
=V
RRMmax
; T
amb
=75°C30µA
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 30 K/W
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W

PRLL4001,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE GEN PURP 50V MELF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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