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STTH3R02QRL

P1-P3P4-P6P7-P9
This is information on a product in full production.
April 2014 DocID12359 Rev 3 1/9
STTH3R02
Ultrafast recovery diode
Datasheet
-
production data
Features
• Very low conduction losses
• Negligible switching losses
• Low forward and reverse recovery times
• High junction temperature
Description
The STTH3R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-201AD, DO-15, and SMC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
KA
K
A
K
A
K
K
A
A
K
A
DO-15
STTH3R02Q
SMC
STTH3R02S
DO-201AD
STTH3R02
Table 1. Device summary
I
F(AV)
3 A
V
RRM
200 V
T
j
(max) 175 °C
V
F
(typ) 0.7 V
t
rr
(typ) 16 ns
www.st.com
Characteristics STTH3R02
2/9 DocID12359 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.04 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
FRM
Repetitive peak forward current
t
p
= 5 µs, F = 5 kHz
110 A
I
F(RMS)
Forward rms current
DO-201AD / DO-15 70
A
SMC 70
I
F(AV)
Average forward current, δ = 0.5
DO-15 T
lead
= 50 °C
3ADO-201AD T
lead
= 90 °C
SMC T
c
= 110 °C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 75 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
T
L
Maximum lead temperature for soldering during 10 s at 4 mm from
case
230 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
Lead Length = 10 mm on infinite
heatsink
DO-15 45
°C/WDO-201AD 30
R
th(j-c)
Junction to case SMC 20
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
3
µA
T
j
= 125 °C 3 30
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C I
F
= 9 A 1.20
V
T
j
= 25 °C
I
F
= 3 A
0.89 1.0
T
j
= 100 °C 0.76 0.85
T
j
= 150 °C 0.70 0.80
DocID12359 Rev 3 3/9
STTH3R02 Characteristics
9
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
24 30
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
16 20
I
RM
Reverse recovery current
I
F
= 3 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125 °C
3.5 4.5 A
t
fr
Forward recovery time
I
F
= 3 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
40 ns
V
FP
Forward recovery voltage
I
F
= 3 A, dI
F
/dt = 100 A/µs,
T
j
= 25 °C
1.9 V
Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus forward
current (typical values)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 5 WP = 5 W
P = 3 WP = 3 W
P = 10 WP = 10 W
δ
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus forward
current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-201AD
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
Epoxy printed circuit board FR4, e = 35 µm
CU
th(j-a)
/R
th(j-a)
Single pulse
DO-201AD
L
leads
=10 mm
t
P
(s)
P1-P3P4-P6P7-P9

STTH3R02QRL

Mfr. #:
Buy STTH3R02QRL
Manufacturer:
STMicroelectronics
Description:
Rectifiers high voltage diode
Lifecycle:
New from this manufacturer.
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