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ZXTP2012ASTOA

P1-P3P4-P6
ZXTP2012A
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-100 -120 V I
C
=-100␮A
Collector-emitter breakdown voltage BV
CER
-100 -120 V I
C
=-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BV
CEO
-60 -80 V I
C
=-10mA*
Emitter-base breakdown voltage BV
EBO
-7 -8.1 V I
E
=-100␮A
Collector cut-off current I
CBO
⬍1-20
-0.5
nA
␮A
V
CB
=-80V
V
CB
=-80V, T
amb
=100⬚C
Collector cut-off current I
CER
Rⱕ1k⍀
⬍1-20
-0.5
nA
␮A
V
CB
=-80V
V
CB
=-80V, T
amb
=100⬚C
Emitter cut-off current I
EBO
⬍1-10nAV
EB
=-6V
Collector-emitter saturation voltage V
CE(SAT)
-14
-50
-80
-145
-20
-65
-115
-210
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
Base-emitter saturation voltage V
BE(SAT)
-960 -1060 mV I
C
=-4A, I
B
=-400mA*
Base-emitter turn-on voltage V
BE(ON)
-850 -960 mV I
C
=-4A, V
CE
=-1V*
Static forward current transfer ratio h
FE
100
100
65
10
250
200
120
25
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition frequency f
T
120 MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output capacitance C
OBO
48 pF V
CB
=-10V, f=1MHz*
Switching times t
ON
t
OFF
39
370
ns I
C
=-1A, V
CC
=-10V,
I
B1
=I
B2
=-100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ZXTP2012A
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
5
TYPICAL CHARACTERISTICS
ZXTP2012A
SEMICONDUCTORS
6
ISSUE 2 - NOVEMBER 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
DIM
Millimeters Inches
Min Max Min Max
A 0.41 0.495 0.016 0.0195
B 0.41 0.495 0.016 0.0195
C 3.61 4.01 0.142 0.158
D 4.37 4.77 0.172 0.188
E 2.16 2.41 0.085 0.095
F
—
2.50 — 0.098
G 1.27 NOM 0.050 NOM
L 13.00 13.97 0.512 0.550
PACKAGE DIMENSIONS
P1-P3P4-P6

ZXTP2012ASTOA

Mfr. #:
Buy ZXTP2012ASTOA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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