ZXTP2012ASTZ

1
SEMICONDUCTORS
SUMMARY
BV
CEO
= -60V : R
SAT
= 38m ; I
C
= -3.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
Excellent gain up to 10 amps
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Power switches
Motor control
DEVICE MARKING
ZXT
P20
12
ZXTP2012A
ISSUE 2 - NOVEMBER 2005
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
DEVICE QUANTITY PER REEL
ZXTP2012ASTOA
ZXTP2012ASTZ
2,000 units / reel
2,000 units / carton
ORDERING INFORMATION
E
-
l
i
n
e
PINOUT
TOP VIEW
ZXTP2012A
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R
JA
125 °C/W
Junction to ambient
(b)
R
JA
175 °C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
-100 V
Collector-emitter voltage BV
CEO
-60 V
Emitter-base voltage BV
EBO
-7 V
Continuous collector current
(a)
I
C
-3.5 A
Peak pulse current I
CM
-15 A
Practical power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.0
8
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
0.71
5.7
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to 150 °C
ABSOLUTE MAXIMUM RATINGS
ZXTP2012A
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
3
CHARACTERISTICS

ZXTP2012ASTZ

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 60V 3.5A 3-PIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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