RJK1054DPB Preliminary
R07DS0093EJ0300 Rev.3.00 Page 2 of 6
Apr 11, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
100 — — V I
D
= 10 mA, V
GS
= 0 V
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 20 V, V
DS
= 0 V
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 100 V, V
GS
= 0 V
Gate to source cutoff voltage V
GS(off)
2.0 — 4.0 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state resistance R
DS(on)
— 17 22 m I
D
= 10 A, V
GS
= 10 V
Note4
Forward transfer admittance |y
fs
| — 32 — S I
D
= 10 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 2000 — pF
Output capacitance Coss — 350 — pF
Reverse transfer capacitance Crss — 80 — pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Gate Resistance Rg — 0.5 —
Total gate charge Qg — 27 — nC
Gate to source charge Qgs — 9.0 — nC
Gate to drain charge Qgd — 4.5 — nC
V
DD
= 50 V, V
GS
= 10 V,
I
D
= 20 A
Turn-on delay time t
d(on)
— 12 — ns
Rise time t
r
— 3.8 — ns
Turn-off delay time t
d(off)
— 32 — ns
Fall time t
f
— 5.4 — ns
V
GS
= 10 V, I
D
= 10 A,
V
DD
30 V, R
L
= 3 ,
Rg = 4.7
Body–drain diode forward voltage V
DF
— 0.8 1.1 V I
F
= 20 A, V
GS
= 0 V
Note4
Body–drain diode reverse recovery time t
rr
— 48 — ns
I
F
= 20 A, V
GS
= 0 V
di
F
/ dt = 100 A/ s
Notes: 4. Pulse test
