2PB709AQW,115

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DATA SHEET
Product data sheet 2002 Jun 26
DISCRETE SEMICONDUCTORS
2PB709AW
PNP general purpose transistor
db
ook, halfpage
M3D114
2002 Jun 26 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB709AW
FEATURES
High collector current (max. 100 mA)
Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
2PB709AQW N5*
2PB709ARW N7*
2PB709ASW N9*
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
Fig.1 Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 45 V
V
CEO
collector-emitter voltage open base 45 V
V
EBO
emitter-base voltage open collector 6 V
I
C
collector current (DC) 100 mA
I
CM
peak collector current 200 mA
P
tot
total power dissipation T
amb
25 °C; note 1 200 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C

2PB709AQW,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PNP 45V 0.1A SC59
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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