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SQJ412EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ412EP
www.vishay.com
Vishay Siliconix
S12-1860-Rev. C, 13-Aug-12
1
Document Number: 65935
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
() at V
GS
= 10 V 0.0041
R
DS(on)
() at V
GS
= 4.5 V 0.0052
I
D
(A) 32
Configuration Single
D
G
S
N-Channel MOSFET
4
6.15 mm
PowerPAK
®
SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ412EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
32
A
T
C
= 125 °C 32
Continuous Source Current (Diode Conduction)
a
I
S
32
Pulsed Drain Current
b
I
DM
128
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
53
Single Pulse Avalanche Energy E
AS
140 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
83
W
T
C
= 125 °C 27
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
1.8
SQJ412EP
www.vishay.com
Vishay Siliconix
S12-1860-Rev. C, 13-Aug-12
2
Document Number: 65935
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1
μA V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 10.3 A - 0.0035 0.0041
V
GS
= 10 V I
D
= 10.3 A, T
J
= 125 °C - 0.0053 0.0070
V
GS
= 10 V I
D
= 10.3 A, T
J
= 175 °C - 0.0065 0.0085
V
GS
= 4.5 V I
D
= 8.7 A - 0.0042 0.0052
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 16 A - 85 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz
- 4950 5950
pF Output Capacitance C
oss
- 630 760
Reverse Transfer Capacitance C
rss
- 270 330
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 10 A
- 80 120
nC Gate-Source Charge
c
Q
gs
- 13.1 -
Gate-Drain Charge
c
Q
gd
- 12.3 -
Gate Resistance R
g
f = 1 MHz 0.36 0.72 1.08
Turn-On Delay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 6
-4555
ns
Rise Time
c
t
r
- 150 180
Turn-Off Delay Time
c
t
d(off)
-5060
Fall Time
c
t
f
-5570
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 128 A
Forward Voltage V
SD
I
F
= 10 A, V
GS
= 0 - 0.8 1.1 V
SQJ412EP
www.vishay.com
Vishay Siliconix
S12-1860-Rev. C, 13-Aug-12
3
Document Number: 65935
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
14
28
42
56
70
0246810
V
GS
=10Vthru4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
40
80
120
160
200
0 1224364860
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
C
rss
0
1000
2000
3000
4000
5000
6000
7000
0 10203040
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
14
28
42
56
70
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.000
0.003
0.006
0.009
0.012
0.015
0 1428425670
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 102030405060708090
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 20 V
l
D
= 10 A
P1-P3P4-P6P7-P9P10-P11

SQJ412EP-T1_GE3

Mfr. #:
Buy SQJ412EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 32A 83W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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