AFT18HW355SR6
15
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering B ulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
The R5 tape and reel option for AFT18HW355S part will be available for 2 years after release of AFT18HW355S. Freescale
Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the
2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT18HW355S in the R6
tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Jan. 2013 Initial Release of Data Sheet
1 Jan. 2013 Typical Performance frequency table: updated values to show statistical broadband performance, p. 1
Maximum Ratings table: added CW operation showing 25C maximum CW rating limitation, p. 2
Functional Tests t able: updated typical values to reflect 1880 MHz typical performance values from p. 1
Typical Performance frequency table, changed Power G ain minimum value from 42.0% to 45.0%, p. 3
Load Mismatch table: updated VSWR output power rating to a higher 2--carrier W--CDMA value, p. 3
Typical Performance table: added footnote 5 to align with data in table, p. 3
Fig. 10, Peaking Side Load Pull Performance — Maximum P1dB Tuning: corrected V
GSB
from 1.45 Vdc to
1.7 Vdc, p. 8
Fig. 11, Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning: corrected V
GSB
from
1.45 Vdc to 1.7 Vdc, p. 8
