DMP1080UCB4-7 Datasheet DMP1080UCB4-7 | P1-P3

DMP1080UCB4

Document number: DS35827 Rev. 5 - 2

1 of 6

www.diodes.com

May 2015

DMP1080UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary (Typ. @ V

GS

= -4.5V, T

A

= +25°C)

V

DSS

R

DS(on)

Q

g

Q

gd

I

D

-12V

65mΩ

2.5nC

0.6nC

-3.3A

Description

This new generation MOSFET is designed to minimize the on-state

resistance (R

DS(on)

) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

Applications

 Battery Management

 Load Switch

 Battery Protection

Features

 LD-MOS Technology with the Lowest Figure of Merit:

R

DS(on)

= 65mΩ to Minimize On-State Losses

Q

g

= 2.5nC for Ultra-Fast Switching

 V

gs(th)

= -0.6V typ. for a Low Turn-On Potential

 CSP with Footprint 1.0mm × 1.0mm

 Height = 0.62mm for Low Profile

 ESD = 3kV HBM Protection of Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1010-4

 Terminal Connections: See Diagram Below

 Weight: 0.0018 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP1080UCB4-7

U-WLB1010-4

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

U-WLB1010-4

Top View

Equivalent Circuit

ESD PROTECTED TO 3kV

S

D

G

D

BW = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

BW

YM

U-WLB1010-4

DMP1080UCB4

Document number: DS35827 Rev. 5 - 2

2 of 6

www.diodes.com

May 2015

DMP1080UCB4

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-12

V

Gate-Source Voltage

V

GSS

-6

V

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.3

-2.7

A

Continuous Drain Current (Note 5) V

GS

= -2.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.0

-2.4

A

Pulsed Drain Current (Note 6)

I

DM

20

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 7)

P

D

0.82

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 7)

R

θJA

150

°C/W

Thermal Resistance, Junction to Case @T

C

= +25°C (Note 7)

R

θJC

42.66

°C/W

Power Dissipation (Note 5)

P

D

1.59

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

80.29

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

-12

-

V

GS

= 0V, I

D

= -250μA

Gate-Source Breakdown Voltage

BV

GSS

-6.0

-

V

DS

= 0V, I

G

= -250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-

-1

A

V

DS

= -9.6V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

-100

nA

V

GS

= -6V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-0.4

-0.6

-1.0

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

65

80

mΩ

V

GS

= -4.5V, I

D

= -500mA

-

77

93

V

GS

= -2.5V, I

D

= -500mA

-

108

130

V

GS

= -1.5V, I

D

= -500mA

Forward Transfer Admittance

|Y

fs

|

-

4

-

S

V

DS

= -6V, I

D

= -500mA

Diode Forward Voltage

V

SD

-0.6

-1.0

V

GS

= 0V, I

S

= -500mA

Reverse Recovery Charge

Q

rr

-

2.0

-

nC

V

dd

= –4.0V, I

F

= –0.5A,

di/dt =100A/μs

Reverse Recovery Time

t

rr

-

9.5

-

ns

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

-

213

350

pF

V

DS

= -6V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

119

250

Reverse Transfer Capacitance

C

rss

-

54.4

90

Total Gate Charge

Q

g

-

2.5

5

nC

V

GS

= -4.5V, V

DS

= -6V,

I

D

= -500mA

Gate-Source Charge

Q

gs

-

0.3

-

Gate-Drain Charge

Q

gd

-

0.6

-

Gate Charge at Vth

Q

g(th)

-

0.15

-

Turn-On Delay Time

t

D(on)

-

16.7

-

ns

V

DS

= -6V, V

GS

= -2.5V,

R

G

= 20Ω, I

D

= -500mA

Turn-On Rise Time

t

r

-

20.6

-

Turn-Off Delay Time

t

D(off)

-

38.4

-

Turn-Off Fall Time

t

f

-

28.4

-

Notes: 5. Device mounted on FR4 material with 1-inch

2

(6.45-cm

2

), 2-oz. (0.071-mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMP1080UCB4

Document number: DS35827 Rev. 5 - 2

3 of 6

www.diodes.com

May 2015

DMP1080UCB4

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

-I , DRAIN CURRENT (A)

D

V = -1.0V

GS

V = -1.2V

GS

V = -1.5V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -4.0V

GS

V = -4.5V

GS

V = -6.0V

GS

0

1

2

3

4

5

0 0.5 1.0 1.5 2.0

-I , DRAIN CURRENT (A)

D

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

T = 150 C

A



T = 125 C

A



T = 85 C

A



T = 25 C

A



T = -55 C

A



V = -5.0V

DS

0.02

0.04

0.06

0.08

0.12

0.14

0.16

0.18

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.10

0.20

0

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



-I , DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

V = -6.0V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -1.5V

GS

0.04

0.06

0.08

0 1 2 3 4 5

0.10

-I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



T = -55 C

A



T = 25 C

A



T = 85 C

A



T = 125 C

A



T = 150 C

A



V = -4.5V

GS

0.6

0.8

1.2

1.4

1.6

1.0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = -4.5V

I = -2.0A

GS

D

V = -2.5V

I = -1.5A

GS

D

0.02

0.04

0.06

0.08

0.12

0.14

0.16

0.10

0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J



Fig. 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)



V = -4.5V

I = A

GS

D

-2.0

V = 5V

I = A

GS

D

-2.

-1.5

DMP1080UCB4-7

DMP1080UCB4-7

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