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Document Number: 72134
S-80272-Rev. B, 11-Feb-08
Vishay Siliconix
SUM40N10-30
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
SS
= 0 V, I
D
= 250 µA
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
24
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V
1
µA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
75 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 15 A
0.024 0.030
Ω
V
GS
= 6 V, I
D
= 10 A
0.026 0.034
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
0.054
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
0.067
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
10 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2400
pFOutput Capacitance
C
oss
270
Reverse Transfer Capacitance
C
rss
90
Total Gate Charge
c
Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 40 A
35 60
nC
Gate-Source Charge
c
Q
gs
11
Gate-Drain Charge
c
Q
gd
9
Gate Resistance
R
G
1.7 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 1.25 Ω
I
D
≅ 40 A, V
GEN
= 10 V, R
G
= 2.5 Ω
11 20
ns
Rise Time
c
t
r
12 20
Turn-Off Delay Time
c
t
d(off)
30 45
Fall Time
c
t
f
12 20
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
40
A
Pulsed Current
I
SM
75
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
1.0 1.5 V
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/µs
60 100 ns
Peak Reverse Recovery Current
I
RM(REC)
58A
Reverse Recovery Charge
Q
rr
0.15 0.4 µC
