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PRMH9Z

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
PRMH9
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
PRMH9 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 June 2017 4 / 13
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 385 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 261 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-024488
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
Nexperia
PRMH9
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
PRMH9 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 June 2017 5 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current (emitter open)
V
CB
= 50 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
amb
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current (base open)
V
CE
= 30 V; I
B
= 0 A; T
amb
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 150 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA; T
amb
= 25 °C 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA; T
amb
= 25 °C - - 100 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA; T
amb
= 25 °C - 0.7 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 1 mA; T
amb
= 25 °C 1.4 0.8 - V
R1 bias resistor 1 [1] 7 10 13 kΩ
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 3.7 4.7 5.7
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 2.5 pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 230 - MHz
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 3. DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Nexperia
PRMH9
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
PRMH9 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 13 June 2017 6 / 13
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 5. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac786
I
C
(mA)
10
-1
10
2
101
1
10
V
I(on)
(V)
10
-1
(1)
(2)
(3)
V
CE
= 0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. On-state input voltage as a function of collector
current; typical values
V
CE
= 5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Off-state input voltage as a function of
collector current; typical values
f = 1 MHz; T
amb
= 25 °C
Fig. 8. Collector capacitance as a function of
collector-base voltage; typical values
P1-P3P4-P6P7-P9P10-P12P13-P13

PRMH9Z

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Nexperia
Description:
Bipolar Transistors - BJT PRMH9/SOT1268 DFN1412-6
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