April 2011 Doc ID 9615 Rev 6 1/13
13
STW12NK90Z
N-channel 900 V, 0.72 Ω, 11 A TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
Application
Switching applications
Description
This device is made using the SuperMESH™
Power MOSFET technology that is obtained
through an extreme optimization of ST’s well
established strip-based PowerMESH™ layout. In
addition to pushing on-resistance significantly
down, special care is taken to ensure a very good
dv/dt capability for the most demanding
applications. Such series complements ST full
range of high voltage MOSFETs including
revolutionary MDmesh™ products.
Figure 1. Internal schematic diagram
Order code V
DSS
R
DS(on)
max
I
D
Pw
STW12NK90Z 900 V < 0.88 Ω 11 A 230 W
TO-247
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
STW12NK90Z W12NK90Z TO-247 Tube
www.st.com
Contents STW12NK90Z
2/13 Doc ID 9615 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW12NK90Z Electrical ratings
Doc ID 9615 Rev 6 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 900 V
V
GS
Gate- source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 11 A
I
D
Drain current (continuous) at T
C
= 100 °C 7 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 44 A
P
tot
Total dissipation at T
C
= 25 °C 230 W
Derating Factor 1.85 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) 6000 V
dv/dt
(2)
2. I
SD
11 A, di/dt 200 A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
Peak diode recovery voltage slope 4.5 V/ns
T
stg
Storage temperature
-55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.54 °C/W
R
thj-amb
Thermal resistance junction-ambient max 50 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
11 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
500 mJ

STW12NK90Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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