4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-13
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFB092707FH
PTFB092707FH
Package H-37288L-4/2
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 925 – 960 MHz
Features
• Broadband internal input and output matching
• Typical pulsed CW performance (10 µs pulse
width10%, duty cycle, class AB), 960 MHz, 28 V
- Output power at P
1dB
= 250 W
- Efficiency = 52%
- Gain = 18.5 dB
• Typical single-carrier WCDMA performance,
960 MHz, 28 V, 7.5 dB PAR @ 0.01% CCDF,
- Output power = 63 W
- Efficiency = 33%
- Gain = 19.5 dB
- ACPR = –35 dBc @ 3.84 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
Description
The PTFB092707FH is a 270-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 925 to
960 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
RF Characteristics
Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture)
V
DD
= 28 V, I
DQ
= 2150 mA, P
OUT
= 60 W avg, ƒ = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average
@ 0.01% CCDF, 10 MHz spacing
Characteristic Symbol Min Typ Max Unit
Gain G
ps
18 19 — dB
Drain Efficiency
h
D
28 29 — %
Intermodulation Distortion IMD — –34 –33 dBc
0
10
20
30
40
50
16
17
18
19
20
21
29 33 37 41 45 49 53
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2150 mA, ƒ = 925 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
Gain
Efficiency
b092707fh-gr1a
