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CDSV3-19-G
P1-P2
CDSV3-19-G/20-G/21-G
Features
-Fast switching diode.
-Surface mount package ideally for automatic
insertion.
-For general purpose switching applications.
-High conductance.
Mechanical data
-Case: SOT
-323
-T
erminals: Solder plated, solderable per MIL-
STD-750, Method 2026.
-Marking: CDSV3-19-G KA8
CDSV3-20-G KT2
CDSV3-21-G KT3
Page 1
QW-B0025
SMD Switching Diode
High Speed
RoHS Device
Maximum Rating
(at T
a=25°C unless otherwise noted)
REV:A
V
mA
mW
120
150
200
P
D
I
F
V
R
Junction and storage temperature
Forward current
Power dissipation
Parameter
Symbol
V
alue
Unit
Reverse voltage
T
J
, T
STG
-55 ~ +150
O
C
SOT
-323
Dimensions in inches and (millimeters)
200
200
Electrical Characteristics
(at T
a=25°C unless otherwise noted)
V
UA
V
50
1
1.25
0.1
t
rr
V
(BR)R
I
R
V
F
Diode capacitance
Reverse recovery time
Reverse leakage current
Reverse breakdown voltage
Parameter
Symbol
Min
Max
Unit
Forward voltage
C
D
5
pF
T
est Conditions
100
150
200
nS
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
I
R
=100uA
V
R
=100V
V
R
=150V
V
R
=200V
I
F
=100mA
I
F
=200mA
V
R
=0V
, f=1MH
Z
I
F
=I
R
=30mA, Irr=0.1
X
I
R
CDSV3-19-G
CDSV3-20-G
CDSV3-21-G
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
1
2
3
0.006(0.15)
0.002(0.05)
0.087(2.20)
0.078(2.00)
0.004(0.10)min.
0.004(0.10)max.
0.044(1.10)
0.035(0.90)
0.016(0.40)
0.008(0.20)
Characteristic Curves (CDSV3-19-G/20-G/21-G)
Page 2
SMD Switching Diode
QW-B0025
Fig.1 - Forward Characteristics
REV:A
0.01
0.1
1
10
100
1000
0
1
2
I
F
, Forward Current (mA)
V
F
, Forward V
oltage (V)
O
T
J
=25
C
Fig.2 - Leakage Current vs
Junction T
emperature
0.01
0.1
1
10
100
0
I
R
, Leakage Current (uA)
T
J
, Junction T
emperature (°C)
100
200
P1-P2
CDSV3-19-G
Mfr. #:
Buy CDSV3-19-G
Manufacturer:
Comchip Technology
Description:
Diodes - General Purpose, Power, Switching VR=100V, IF=200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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